/Modules/ARM/ODROID-U3/SCH_PCB/U3_MLAB_ADAPTER.kicad_pcb-bak
1,12 → 1,12
(kicad_pcb (version 4) (host pcbnew 0.201412101631+5319~19~ubuntu14.04.1-product)
(kicad_pcb (version 4) (host pcbnew 0.201503110816+5502~22~ubuntu14.10.1-product)
 
(general
(links 43)
(no_connects 0)
(area 104.4448 30.8356 164.109401 63.065)
(no_connects 18)
(area 107.622599 35.235799 158.010601 61.111601)
(thickness 1.6)
(drawings 19)
(tracks 66)
(drawings 18)
(tracks 62)
(zones 0)
(modules 22)
(nets 13)
37,7 → 37,7
)
 
(setup
(last_trace_width 1)
(last_trace_width 0.3)
(user_trace_width 0.2)
(user_trace_width 0.3)
(user_trace_width 0.4)
68,8 → 68,8
(pad_size 4 4)
(pad_drill 3)
(pad_to_mask_clearance 0)
(aux_axis_origin 0 0)
(grid_origin 132.8166 55.5498)
(aux_axis_origin 102.3366 65.7098)
(grid_origin 102.3366 65.7098)
(visible_elements 7FFFFF7F)
(pcbplotparams
(layerselection 0x01060_80000000)
142,138 → 142,6
(add_net GND)
)
 
(module MLAB_C:TantalC_SizeC_Reflow (layer B.Cu) (tedit 54799D04) (tstamp 548711C6)
(at 147.2946 58.6232 180)
(descr "Tantal Cap. , Size C, EIA-6032, Reflow,")
(tags "Tantal Cap. , Size C, EIA-6032, Reflow,")
(path /5485FFA7)
(attr smd)
(fp_text reference C1 (at 0.3048 -2.1336 180) (layer B.SilkS)
(effects (font (thickness 0.15)) (justify mirror))
)
(fp_text value CP2 (at 0 -3 180) (layer B.SilkS) hide
(effects (font (thickness 0.15)) (justify mirror))
)
(fp_line (start -4 1) (end -4 -1) (layer B.SilkS) (width 0.15))
(fp_line (start 2 -1) (end -2 -1) (layer B.SilkS) (width 0.15))
(fp_line (start 2 1) (end -2 1) (layer B.SilkS) (width 0.15))
(fp_text user + (at -4 2 180) (layer B.SilkS)
(effects (font (thickness 0.15)) (justify mirror))
)
(fp_line (start -5 3) (end -5 1) (layer B.SilkS) (width 0.15))
(fp_line (start -5 2) (end -4 2) (layer B.SilkS) (width 0.15))
(pad 2 smd rect (at 2 0 180) (size 2 2) (layers B.Cu B.Paste B.Mask)
(net 1 GND))
(pad 1 smd rect (at -2 0 180) (size 2 2) (layers B.Cu B.Paste B.Mask)
(net 2 +5V))
(model MLAB_3D/Capacitors/c_tant_C.wrl
(at (xyz 0 0 0))
(scale (xyz 1 1 1))
(rotate (xyz 0 0 180))
)
)
 
(module MLAB_C:TantalC_SizeC_Reflow (layer B.Cu) (tedit 54799D04) (tstamp 548711CC)
(at 138.2522 56.1594 180)
(descr "Tantal Cap. , Size C, EIA-6032, Reflow,")
(tags "Tantal Cap. , Size C, EIA-6032, Reflow,")
(path /548601CE)
(attr smd)
(fp_text reference C2 (at 0 3 180) (layer B.SilkS)
(effects (font (thickness 0.15)) (justify mirror))
)
(fp_text value CP2 (at 0 -3 180) (layer B.SilkS) hide
(effects (font (thickness 0.15)) (justify mirror))
)
(fp_line (start -4 1) (end -4 -1) (layer B.SilkS) (width 0.15))
(fp_line (start 2 -1) (end -2 -1) (layer B.SilkS) (width 0.15))
(fp_line (start 2 1) (end -2 1) (layer B.SilkS) (width 0.15))
(fp_text user + (at -4 2 180) (layer B.SilkS)
(effects (font (thickness 0.15)) (justify mirror))
)
(fp_line (start -5 3) (end -5 1) (layer B.SilkS) (width 0.15))
(fp_line (start -5 2) (end -4 2) (layer B.SilkS) (width 0.15))
(pad 2 smd rect (at 2 0 180) (size 2 2) (layers B.Cu B.Paste B.Mask)
(net 1 GND))
(pad 1 smd rect (at -2 0 180) (size 2 2) (layers B.Cu B.Paste B.Mask)
(net 3 +1.8V))
(model MLAB_3D/Capacitors/c_tant_C.wrl
(at (xyz 0 0 0))
(scale (xyz 1 1 1))
(rotate (xyz 0 0 180))
)
)
 
(module MLAB_D:Diode-MiniMELF_Standard (layer B.Cu) (tedit 547999ED) (tstamp 54896DB3)
(at 152.1206 50.9778)
(descr "Diode Mini-MELF Standard")
(tags "Diode Mini-MELF Standard")
(path /5485FEF7)
(attr smd)
(fp_text reference D1 (at 0 2) (layer B.SilkS)
(effects (font (thickness 0.15)) (justify mirror))
)
(fp_text value DIODESCH (at 0 -3) (layer B.SilkS) hide
(effects (font (thickness 0.15)) (justify mirror))
)
(fp_line (start 0 0) (end 0 1) (layer B.SilkS) (width 0.15))
(fp_line (start 0 1) (end 0 -1) (layer B.SilkS) (width 0.15))
(fp_line (start 0 -1) (end 0 0) (layer B.SilkS) (width 0.15))
(fp_line (start 0 1) (end 0 -1) (layer B.SilkS) (width 0.15))
(fp_text user A (at -1 -1) (layer B.SilkS)
(effects (font (size 0 0) (thickness 0.15)) (justify mirror))
)
(fp_text user K (at 1 -1) (layer B.SilkS)
(effects (font (size 0 0) (thickness 0.15)) (justify mirror))
)
(fp_circle (center 0 0) (end 0 0) (layer B.Adhes) (width 0.15))
(fp_circle (center 0 0) (end 0 0) (layer B.Adhes) (width 0.15))
(pad 1 smd rect (at -1 0) (size 1 1) (layers B.Cu B.Paste B.Mask)
(net 1 GND))
(pad 2 smd rect (at 1 0) (size 1 1) (layers B.Cu B.Paste B.Mask)
(net 2 +5V))
(model MLAB_3D/Diodes/MiniMELF_DO213AA.wrl
(at (xyz 0 0 0))
(scale (xyz 0 0 0))
(rotate (xyz 0 0 0))
)
)
 
(module MLAB_D:Diode-MiniMELF_Standard (layer B.Cu) (tedit 547999ED) (tstamp 54896DFE)
(at 128.1176 42.9768 90)
(descr "Diode Mini-MELF Standard")
(tags "Diode Mini-MELF Standard")
(path /548601BC)
(attr smd)
(fp_text reference D2 (at 0 2 90) (layer B.SilkS)
(effects (font (thickness 0.15)) (justify mirror))
)
(fp_text value DIODESCH (at 0 -3 90) (layer B.SilkS) hide
(effects (font (thickness 0.15)) (justify mirror))
)
(fp_line (start 0 0) (end 0 1) (layer B.SilkS) (width 0.15))
(fp_line (start 0 1) (end 0 -1) (layer B.SilkS) (width 0.15))
(fp_line (start 0 -1) (end 0 0) (layer B.SilkS) (width 0.15))
(fp_line (start 0 1) (end 0 -1) (layer B.SilkS) (width 0.15))
(fp_text user A (at -1 -1 90) (layer B.SilkS)
(effects (font (size 0 0) (thickness 0.15)) (justify mirror))
)
(fp_text user K (at 1 -1 90) (layer B.SilkS)
(effects (font (size 0 0) (thickness 0.15)) (justify mirror))
)
(fp_circle (center 0 0) (end 0 0) (layer B.Adhes) (width 0.15))
(fp_circle (center 0 0) (end 0 0) (layer B.Adhes) (width 0.15))
(pad 1 smd rect (at -1 0 90) (size 1 1) (layers B.Cu B.Paste B.Mask)
(net 1 GND))
(pad 2 smd rect (at 1 0 90) (size 1 1) (layers B.Cu B.Paste B.Mask)
(net 3 +1.8V))
(model MLAB_3D/Diodes/MiniMELF_DO213AA.wrl
(at (xyz 0 0 0))
(scale (xyz 0 0 0))
(rotate (xyz 0 0 0))
)
)
 
(module MLAB_hreb:Pin_Header_Straight_2x03 placed (layer F.Cu) (tedit 54870C46) (tstamp 54896DC4)
(at 153.1366 47.4218 180)
(descr "1 pin")
294,13 → 162,13
(pad 1 thru_hole rect (at -2.54 1.27 180) (size 1.651 1.651) (drill 0.9) (layers *.Cu *.Mask F.SilkS)
(net 1 GND))
(pad 2 thru_hole rect (at 0 1.27 180) (size 1.651 1.651) (drill 0.9) (layers *.Cu *.Mask F.SilkS)
(net 1 GND))
(pad 3 thru_hole rect (at 2.54 1.27 180) (size 1.651 1.651) (drill 0.9) (layers *.Cu *.Mask F.SilkS)
(net 2 +5V))
(pad 3 thru_hole rect (at 2.54 1.27 180) (size 1.651 1.651) (drill 0.9) (layers *.Cu *.Mask F.SilkS)
(net 1 GND))
(pad 4 thru_hole rect (at 2.54 -1.27 180) (size 1.651 1.651) (drill 0.9) (layers *.Cu *.Mask F.SilkS)
(net 2 +5V))
(pad 5 thru_hole rect (at 0 -1.27 180) (size 1.651 1.651) (drill 0.9) (layers *.Cu *.Mask F.SilkS)
(net 1 GND))
(pad 5 thru_hole rect (at 0 -1.27 180) (size 1.651 1.651) (drill 0.9) (layers *.Cu *.Mask F.SilkS)
(net 2 +5V))
(pad 6 thru_hole rect (at -2.54 -1.27 180) (size 1.651 1.651) (drill 0.9) (layers *.Cu *.Mask F.SilkS)
(net 1 GND))
(model Pin_Headers/Pin_Header_Straight_2x03.wrl
408,13 → 276,13
(pad 1 thru_hole rect (at -2.54 1.27 90) (size 1.651 1.651) (drill 0.9) (layers *.Cu *.Mask F.SilkS)
(net 1 GND))
(pad 2 thru_hole rect (at 0 1.27 90) (size 1.651 1.651) (drill 0.9) (layers *.Cu *.Mask F.SilkS)
(net 1 GND))
(pad 3 thru_hole rect (at 2.54 1.27 90) (size 1.651 1.651) (drill 0.9) (layers *.Cu *.Mask F.SilkS)
(net 3 +1.8V))
(pad 3 thru_hole rect (at 2.54 1.27 90) (size 1.651 1.651) (drill 0.9) (layers *.Cu *.Mask F.SilkS)
(net 1 GND))
(pad 4 thru_hole rect (at 2.54 -1.27 90) (size 1.651 1.651) (drill 0.9) (layers *.Cu *.Mask F.SilkS)
(net 3 +1.8V))
(pad 5 thru_hole rect (at 0 -1.27 90) (size 1.651 1.651) (drill 0.9) (layers *.Cu *.Mask F.SilkS)
(net 1 GND))
(pad 5 thru_hole rect (at 0 -1.27 90) (size 1.651 1.651) (drill 0.9) (layers *.Cu *.Mask F.SilkS)
(net 3 +1.8V))
(pad 6 thru_hole rect (at -2.54 -1.27 90) (size 1.651 1.651) (drill 0.9) (layers *.Cu *.Mask F.SilkS)
(net 1 GND))
(model Pin_Headers/Pin_Header_Straight_2x03.wrl
442,21 → 310,21
(fp_line (start -2 4) (end -2 -4) (layer F.SilkS) (width 0.254))
(fp_line (start -2 4) (end 0 4) (layer F.SilkS) (width 0.254))
(pad 1 thru_hole rect (at -1 -3 90) (size 1.3 1.3) (drill 0.7) (layers *.Cu *.Mask F.SilkS)
(net 4 /GPIO199))
(pad 2 thru_hole rect (at 1 -3 90) (size 1.3 1.3) (drill 0.7) (layers *.Cu *.Mask F.SilkS)
(net 3 +1.8V))
(pad 2 thru_hole rect (at 1 -3 90) (size 1.3 1.3) (drill 0.7) (layers *.Cu *.Mask F.SilkS)
(net 4 /GPIO199))
(pad 3 thru_hole rect (at -1 -1 90) (size 1.3 1.3) (drill 0.7) (layers *.Cu *.Mask F.SilkS)
(net 5 /GPIO200))
(pad 4 thru_hole rect (at 1 -1 90) (size 1.3 1.3) (drill 0.7) (layers *.Cu *.Mask F.SilkS)
(net 8 /UART_RX))
(pad 4 thru_hole rect (at 1 -1 90) (size 1.3 1.3) (drill 0.7) (layers *.Cu *.Mask F.SilkS)
(net 5 /GPIO200))
(pad 5 thru_hole rect (at -1 1 90) (size 1.3 1.3) (drill 0.7) (layers *.Cu *.Mask F.SilkS)
(net 6 /GPIO204))
(pad 6 thru_hole rect (at 1 1 90) (size 1.3 1.3) (drill 0.7) (layers *.Cu *.Mask F.SilkS)
(net 7 /UART_TX))
(pad 6 thru_hole rect (at 1 1 90) (size 1.3 1.3) (drill 0.7) (layers *.Cu *.Mask F.SilkS)
(net 6 /GPIO204))
(pad 7 thru_hole rect (at -1 3 90) (size 1.3 1.3) (drill 0.7) (layers *.Cu *.Mask F.SilkS)
(net 1 GND))
(pad 8 thru_hole rect (at 1 3 90) (size 1.3 1.3) (drill 0.7) (layers *.Cu *.Mask F.SilkS)
(net 2 +5V))
(pad 8 thru_hole rect (at 1 3 90) (size 1.3 1.3) (drill 0.7) (layers *.Cu *.Mask F.SilkS)
(net 1 GND))
(model Pin_Headers/Pin_Header_Straight_2x04.wrl
(at (xyz 0 0 0))
(scale (xyz 0.7874 0.7874 0.7874))
588,9 → 456,9
(pad 1 thru_hole rect (at -1 -1) (size 1.3 1.3) (drill 0.7) (layers *.Cu *.Mask F.SilkS)
(net 9 /SCLK))
(pad 2 thru_hole rect (at 1 -1) (size 1.3 1.3) (drill 0.7) (layers *.Cu *.Mask F.SilkS)
(net 11 /#SS))
(pad 3 thru_hole rect (at -1 1) (size 1.3 1.3) (drill 0.7) (layers *.Cu *.Mask F.SilkS)
(net 10 /MOSI))
(pad 3 thru_hole rect (at -1 1) (size 1.3 1.3) (drill 0.7) (layers *.Cu *.Mask F.SilkS)
(net 11 /#SS))
(pad 4 thru_hole rect (at 1 1) (size 1.3 1.3) (drill 0.7) (layers *.Cu *.Mask F.SilkS)
(net 12 /MISO))
(model Pin_Headers/Pin_Header_Straight_2x02.wrl
732,6 → 600,141
(net 1 GND) (clearance 1) (zone_connect 2))
)
 
(module Diodes_SMD:Diode-SMA_Standard (layer B.Cu) (tedit 5403E41A) (tstamp 5500F136)
(at 124.2568 56.8706 270)
(descr "Diode SMA")
(tags "Diode SMA")
(path /5485FEF7)
(attr smd)
(fp_text reference D1 (at 0 3.81 270) (layer B.SilkS)
(effects (font (size 1 1) (thickness 0.15)) (justify mirror))
)
(fp_text value BAS85 (at 0 -3.81 270) (layer B.SilkS) hide
(effects (font (size 1 1) (thickness 0.15)) (justify mirror))
)
(fp_text user A (at -3.29946 -1.6002 270) (layer B.SilkS)
(effects (font (size 1 1) (thickness 0.15)) (justify mirror))
)
(fp_text user K (at 2.99974 -1.69926 270) (layer B.SilkS)
(effects (font (size 1 1) (thickness 0.15)) (justify mirror))
)
(fp_circle (center 0 0) (end 0.20066 0.0508) (layer B.Adhes) (width 0.381))
(fp_line (start 1.80086 -1.75006) (end 1.80086 -1.39954) (layer B.SilkS) (width 0.15))
(fp_line (start 1.80086 1.75006) (end 1.80086 1.39954) (layer B.SilkS) (width 0.15))
(fp_line (start 2.25044 -1.75006) (end 2.25044 -1.39954) (layer B.SilkS) (width 0.15))
(fp_line (start -2.25044 -1.75006) (end -2.25044 -1.39954) (layer B.SilkS) (width 0.15))
(fp_line (start -2.25044 1.75006) (end -2.25044 1.39954) (layer B.SilkS) (width 0.15))
(fp_line (start 2.25044 1.75006) (end 2.25044 1.39954) (layer B.SilkS) (width 0.15))
(fp_line (start -2.25044 -1.75006) (end 2.25044 -1.75006) (layer B.SilkS) (width 0.15))
(fp_line (start -2.25044 1.75006) (end 2.25044 1.75006) (layer B.SilkS) (width 0.15))
(pad 1 smd rect (at -1.99898 0 270) (size 2.49936 1.80086) (layers B.Cu B.Paste B.Mask)
(net 1 GND))
(pad 2 smd rect (at 1.99898 0 270) (size 2.49936 1.80086) (layers B.Cu B.Paste B.Mask)
(net 2 +5V))
(model Diodes_SMD/Diode-SMA_Standard.wrl
(at (xyz 0 0 0))
(scale (xyz 0.3937 0.3937 0.3937))
(rotate (xyz 0 0 0))
)
)
 
(module Diodes_SMD:Diode-MiniMELF_Standard (layer B.Cu) (tedit 55005B0E) (tstamp 5500F146)
(at 128.1176 42.9768 90)
(descr "Diode Mini-MELF Standard")
(tags "Diode Mini-MELF Standard")
(path /548601BC)
(attr smd)
(fp_text reference D2 (at 0 2.54 90) (layer B.SilkS)
(effects (font (size 1 1) (thickness 0.15)) (justify mirror))
)
(fp_text value BAS85 (at 0 -3.81 90) (layer B.SilkS) hide
(effects (font (size 1 1) (thickness 0.15)) (justify mirror))
)
(fp_line (start 0.65024 -0.0508) (end -0.35052 1.00076) (layer B.SilkS) (width 0.15))
(fp_line (start -0.35052 1.00076) (end -0.35052 -1.00076) (layer B.SilkS) (width 0.15))
(fp_line (start -0.35052 -1.00076) (end 0.65024 0) (layer B.SilkS) (width 0.15))
(fp_line (start 0.65024 1.04902) (end 0.65024 -1.04902) (layer B.SilkS) (width 0.15))
(fp_text user A (at -1.80086 -1.5494 90) (layer B.SilkS)
(effects (font (size 1 1) (thickness 0.15)) (justify mirror))
)
(fp_text user K (at 1.80086 -1.5494 90) (layer B.SilkS)
(effects (font (size 1 1) (thickness 0.15)) (justify mirror))
)
(fp_circle (center 0 0) (end 0 -0.55118) (layer B.Adhes) (width 0.381))
(fp_circle (center 0 0) (end 0 -0.20066) (layer B.Adhes) (width 0.381))
(pad 1 smd rect (at -1.75006 0 90) (size 1.30048 1.69926) (layers B.Cu B.Paste B.Mask)
(net 1 GND))
(pad 2 smd rect (at 1.75006 0 90) (size 1.30048 1.69926) (layers B.Cu B.Paste B.Mask)
(net 3 +1.8V))
(model Diodes_SMD/Diode-MiniMELF_Standard.wrl
(at (xyz 0 0 0))
(scale (xyz 0.3937 0.3937 0.3937))
(rotate (xyz 0 0 0))
)
)
 
(module Capacitors_Tantalum_SMD:TantalC_SizeB_EIA-3528_Reflow (layer B.Cu) (tedit 55005C2F) (tstamp 5500FA5D)
(at 128.4224 57.4294 90)
(descr "Tantal Cap. , Size B, EIA-3528, Reflow,")
(tags "Tantal Cap. , Size B, EIA-3528, Reflow,")
(path /5485FFA7)
(attr smd)
(fp_text reference C1 (at -0.20066 3.29946 90) (layer B.SilkS)
(effects (font (size 1 1) (thickness 0.15)) (justify mirror))
)
(fp_text value 10uF (at -0.09906 -3.59918 90) (layer B.SilkS) hide
(effects (font (size 1 1) (thickness 0.15)) (justify mirror))
)
(fp_text user + (at -3.59918 2.49936 90) (layer B.SilkS)
(effects (font (size 1 1) (thickness 0.15)) (justify mirror))
)
(fp_line (start -2.99974 1.89992) (end -2.99974 -1.89992) (layer B.SilkS) (width 0.15))
(fp_line (start 2.49936 1.89992) (end -2.49936 1.89992) (layer B.SilkS) (width 0.15))
(fp_line (start 2.49682 -1.89992) (end -2.5019 -1.89992) (layer B.SilkS) (width 0.15))
(fp_line (start -3.60172 3.00228) (end -3.60172 1.90246) (layer B.SilkS) (width 0.15))
(fp_line (start -4.20116 2.5019) (end -3.00228 2.5019) (layer B.SilkS) (width 0.15))
(pad 2 smd rect (at 1.5494 0 90) (size 1.95072 2.49936) (layers B.Cu B.Paste B.Mask)
(net 1 GND))
(pad 1 smd rect (at -1.5494 0 90) (size 1.95072 2.49936) (layers B.Cu B.Paste B.Mask)
(net 2 +5V))
(model Capacitors_Tantalum_SMD/TantalC_SizeB_EIA-3528_Reflow.wrl
(at (xyz 0 0 0))
(scale (xyz 1 1 1))
(rotate (xyz 0 0 180))
)
)
 
(module Capacitors_Tantalum_SMD:TantalC_SizeB_EIA-3528_Reflow (layer B.Cu) (tedit 55005C2F) (tstamp 5500FA8F)
(at 138.684 56.1086 180)
(descr "Tantal Cap. , Size B, EIA-3528, Reflow,")
(tags "Tantal Cap. , Size B, EIA-3528, Reflow,")
(path /548601CE)
(attr smd)
(fp_text reference C2 (at -0.20066 3.29946 180) (layer B.SilkS)
(effects (font (size 1 1) (thickness 0.15)) (justify mirror))
)
(fp_text value 10uF (at -0.09906 -3.59918 180) (layer B.SilkS) hide
(effects (font (size 1 1) (thickness 0.15)) (justify mirror))
)
(fp_text user + (at -3.59918 2.49936 180) (layer B.SilkS)
(effects (font (size 1 1) (thickness 0.15)) (justify mirror))
)
(fp_line (start -2.99974 1.89992) (end -2.99974 -1.89992) (layer B.SilkS) (width 0.15))
(fp_line (start 2.49936 1.89992) (end -2.49936 1.89992) (layer B.SilkS) (width 0.15))
(fp_line (start 2.49682 -1.89992) (end -2.5019 -1.89992) (layer B.SilkS) (width 0.15))
(fp_line (start -3.60172 3.00228) (end -3.60172 1.90246) (layer B.SilkS) (width 0.15))
(fp_line (start -4.20116 2.5019) (end -3.00228 2.5019) (layer B.SilkS) (width 0.15))
(pad 2 smd rect (at 1.5494 0 180) (size 1.95072 2.49936) (layers B.Cu B.Paste B.Mask)
(net 1 GND))
(pad 1 smd rect (at -1.5494 0 180) (size 1.95072 2.49936) (layers B.Cu B.Paste B.Mask)
(net 3 +1.8V))
(model Capacitors_Tantalum_SMD/TantalC_SizeB_EIA-3528_Reflow.wrl
(at (xyz 0 0 0))
(scale (xyz 1 1 1))
(rotate (xyz 0 0 180))
)
)
 
(gr_text "ODROID-U3 MLAB ADAPTER" (at 132.3086 58.8518) (layer F.SilkS)
(effects (font (size 1.5 1.5) (thickness 0.3)))
)
774,60 → 777,50
(gr_text SCLK (at 118.0846 46.0248 90) (layer F.SilkS)
(effects (font (size 1.5 1.5) (thickness 0.3)))
)
(gr_line (start 106.807 34.5694) (end 106.8578 34.5694) (angle 90) (layer Edge.Cuts) (width 0.1))
(gr_line (start 107.6726 35.2858) (end 157.9606 35.2858) (angle 90) (layer Edge.Cuts) (width 0.1) (tstamp 54897BDF))
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