/Modules/Audio/ADCaudio01B/PCB_SCH/ADCaudio01B.kicad_pcb-bak/ADCaudio01B.kicad_pcb-bak
2,11 → 2,11
 
(general
(links 170)
(no_connects 170)
(no_connects 67)
(area 0.205999 -40.434001 70.914001 -0.205999)
(thickness 1.6)
(drawings 4)
(tracks 0)
(tracks 237)
(zones 0)
(modules 77)
(nets 48)
37,7 → 37,7
)
 
(setup
(last_trace_width 0.254)
(last_trace_width 0.5)
(user_trace_width 0.254)
(user_trace_width 0.3)
(user_trace_width 0.4)
133,15 → 133,15
(net 36 /OSR1)
(net 37 /OSR0)
(net 38 /AUDIOF0)
(net 39 "Net-(U4-Pad2)")
(net 40 "Net-(P1-Pad1)")
(net 41 "Net-(P2-Pad1)")
(net 42 "Net-(P3-Pad1)")
(net 43 "Net-(P4-Pad1)")
(net 44 /BCLK)
(net 45 /LRCLK)
(net 46 /DOUT)
(net 47 /MCLK)
(net 39 "Net-(P1-Pad1)")
(net 40 "Net-(P2-Pad1)")
(net 41 "Net-(P3-Pad1)")
(net 42 "Net-(P4-Pad1)")
(net 43 /BCLK)
(net 44 /LRCLK)
(net 45 /DOUT)
(net 46 /MCLK)
(net 47 "Net-(U4-Pad4)")
 
(net_class Default "Toto je výchozí třída sítě."
(clearance 0.254)
196,11 → 196,11
(add_net "Net-(P2-Pad1)")
(add_net "Net-(P3-Pad1)")
(add_net "Net-(P4-Pad1)")
(add_net "Net-(U4-Pad2)")
(add_net "Net-(U4-Pad4)")
)
 
(module MLAB_C:TantalC_SizeB_Reflow (layer B.Cu) (tedit 54799CFA) (tstamp 5479A91B)
(at 35.8775 119.8245 180)
(at 12.319 -6.985 180)
(descr "Tantal Cap. , Size B, EIA-3528, Reflow,")
(tags "Tantal Cap. , Size B, EIA-3528, Reflow,")
(path /546DB268)
231,7 → 231,7
)
 
(module MLAB_C:TantalC_SizeB_Reflow (layer B.Cu) (tedit 54799CFA) (tstamp 5479A920)
(at 36.2585 113.284 180)
(at 12.319 -11.303 180)
(descr "Tantal Cap. , Size B, EIA-3528, Reflow,")
(tags "Tantal Cap. , Size B, EIA-3528, Reflow,")
(path /546DB269)
262,7 → 262,7
)
 
(module MLAB_C:TantalC_SizeB_Reflow (layer B.Cu) (tedit 54799CFA) (tstamp 5479A92A)
(at 29.972 90.3605 180)
(at 12.446 -28.702 180)
(descr "Tantal Cap. , Size B, EIA-3528, Reflow,")
(tags "Tantal Cap. , Size B, EIA-3528, Reflow,")
(path /546DB283)
293,7 → 293,7
)
 
(module MLAB_C:TantalC_SizeB_Reflow (layer B.Cu) (tedit 54799CFA) (tstamp 5479A930)
(at 31.496 82.296 180)
(at 12.446 -33.147 180)
(descr "Tantal Cap. , Size B, EIA-3528, Reflow,")
(tags "Tantal Cap. , Size B, EIA-3528, Reflow,")
(path /546DB284)
324,7 → 324,7
)
 
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 5479A936)
(at 46.0375 116.3955 90)
(at 20.32 -9.271 90)
(path /546DB26C)
(attr smd)
(fp_text reference C5 (at 0 0.3175 90) (layer B.SilkS)
351,8 → 351,8
)
)
 
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 5479A93C)
(at 40.64 87.122 90)
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 5479EC5A)
(at 20.193 -30.988 90)
(path /546DB287)
(attr smd)
(fp_text reference C6 (at 0 0.3175 90) (layer B.SilkS)
379,8 → 379,8
)
)
 
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 5479A942)
(at 57.023 124.333 180)
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 547AF4D7)
(at 28.067 -2.413 180)
(path /546DB272)
(attr smd)
(fp_text reference C7 (at 0 0.3175 180) (layer B.SilkS)
408,7 → 408,7
)
 
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 5479A948)
(at 55.8165 109.2835 180)
(at 26.797 -16.51 180)
(path /546DB273)
(attr smd)
(fp_text reference C8 (at 0 0.3175 180) (layer B.SilkS)
436,7 → 436,7
)
 
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 5479A94E)
(at 50.2285 94.615 180)
(at 28.067 -23.495 180)
(path /546DB28D)
(attr smd)
(fp_text reference C9 (at 0 0.3175 180) (layer B.SilkS)
463,8 → 463,8
)
)
 
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 5479A954)
(at 50.1015 78.5495 180)
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 547AEFA0)
(at 27.305 -38.354 180)
(path /546DB28E)
(attr smd)
(fp_text reference C10 (at 0 0.3175 180) (layer B.SilkS)
492,7 → 492,7
)
 
(module MLAB_C:TantalC_SizeC_Reflow (layer B.Cu) (tedit 54799D04) (tstamp 5479A95A)
(at 64.8335 109.347)
(at 36.576 -14.097)
(descr "Tantal Cap. , Size C, EIA-6032, Reflow,")
(tags "Tantal Cap. , Size C, EIA-6032, Reflow,")
(path /546DB281)
522,29 → 522,29
)
)
 
(module MLAB_C:TantalC_SizeC_Reflow (layer B.Cu) (tedit 54799D04) (tstamp 5479A960)
(at 57.8485 80.137 180)
(module MLAB_C:TantalC_SizeC_Reflow (layer B.Cu) (tedit 54799D04) (tstamp 547AF109)
(at 37.211 -35.941)
(descr "Tantal Cap. , Size C, EIA-6032, Reflow,")
(tags "Tantal Cap. , Size C, EIA-6032, Reflow,")
(path /546DB29C)
(attr smd)
(fp_text reference C12 (at -0.20066 3.29946 180) (layer B.SilkS)
(fp_text reference C12 (at -0.20066 3.29946) (layer B.SilkS)
(effects (font (thickness 0.3048)) (justify mirror))
)
(fp_text value 47u (at -0.09906 -3.59918 180) (layer B.SilkS) hide
(fp_text value 47u (at -0.09906 -3.59918) (layer B.SilkS) hide
(effects (font (thickness 0.3048)) (justify mirror))
)
(fp_line (start -4.30022 1.69926) (end -4.30022 -1.69926) (layer B.SilkS) (width 0.15))
(fp_line (start 2.99974 -1.69926) (end -2.99974 -1.69926) (layer B.SilkS) (width 0.15))
(fp_line (start 2.99974 1.69926) (end -2.99974 1.69926) (layer B.SilkS) (width 0.15))
(fp_text user + (at -4.99872 2.55016 180) (layer B.SilkS)
(fp_text user + (at -4.99872 2.55016) (layer B.SilkS)
(effects (font (thickness 0.3048)) (justify mirror))
)
(fp_line (start -5.00126 3.05308) (end -5.00126 1.95326) (layer B.SilkS) (width 0.15))
(fp_line (start -5.6007 2.5527) (end -4.40182 2.5527) (layer B.SilkS) (width 0.15))
(pad 2 smd rect (at 2.52476 0 180) (size 2.55016 2.49936) (layers B.Cu B.Paste B.Mask)
(pad 2 smd rect (at 2.52476 0) (size 2.55016 2.49936) (layers B.Cu B.Paste B.Mask)
(net 21 GNDA))
(pad 1 smd rect (at -2.52476 0 180) (size 2.55016 2.49936) (layers B.Cu B.Paste B.Mask)
(pad 1 smd rect (at -2.52476 0) (size 2.55016 2.49936) (layers B.Cu B.Paste B.Mask)
(net 22 +5V))
(model MLAB_3D/Capacitors/c_tant_C.wrl
(at (xyz 0 0 0))
553,14 → 553,14
)
)
 
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 5479A966)
(at 59.944 116.3955 270)
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 547AF500)
(at 30.988 -14.097 90)
(path /546DB282)
(attr smd)
(fp_text reference C13 (at 0 0.3175 270) (layer B.SilkS)
(fp_text reference C13 (at 0 0.3175 90) (layer B.SilkS)
(effects (font (size 0.50038 0.50038) (thickness 0.10922)) (justify mirror))
)
(fp_text value 100n (at 0.127 -0.381 270) (layer B.SilkS)
(fp_text value 100n (at 0.127 -0.381 90) (layer B.SilkS)
(effects (font (size 0.50038 0.50038) (thickness 0.10922)) (justify mirror))
)
(fp_circle (center -1.651 -0.762) (end -1.651 -0.635) (layer B.SilkS) (width 0.15))
570,9 → 570,9
(fp_line (start 0.508 0.762) (end 1.524 0.762) (layer B.SilkS) (width 0.15))
(fp_line (start 1.524 0.762) (end 1.524 -0.762) (layer B.SilkS) (width 0.15))
(fp_line (start 1.524 -0.762) (end 0.508 -0.762) (layer B.SilkS) (width 0.15))
(pad 1 smd rect (at -0.9525 0 270) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(pad 1 smd rect (at -0.9525 0 90) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(net 22 +5V))
(pad 2 smd rect (at 0.9525 0 270) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(pad 2 smd rect (at 0.9525 0 90) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(net 21 GNDA))
(model MLAB_3D/Resistors/chip_cms.wrl
(at (xyz 0 0 0))
581,14 → 581,14
)
)
 
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 5479A96C)
(at 54.483 86.995 270)
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 547AF1B7)
(at 31.623 -35.56 90)
(path /546DB29D)
(attr smd)
(fp_text reference C14 (at 0 0.3175 270) (layer B.SilkS)
(fp_text reference C14 (at 0 0.3175 90) (layer B.SilkS)
(effects (font (size 0.50038 0.50038) (thickness 0.10922)) (justify mirror))
)
(fp_text value 100n (at 0.127 -0.381 270) (layer B.SilkS)
(fp_text value 100n (at 0.127 -0.381 90) (layer B.SilkS)
(effects (font (size 0.50038 0.50038) (thickness 0.10922)) (justify mirror))
)
(fp_circle (center -1.651 -0.762) (end -1.651 -0.635) (layer B.SilkS) (width 0.15))
598,9 → 598,9
(fp_line (start 0.508 0.762) (end 1.524 0.762) (layer B.SilkS) (width 0.15))
(fp_line (start 1.524 0.762) (end 1.524 -0.762) (layer B.SilkS) (width 0.15))
(fp_line (start 1.524 -0.762) (end 0.508 -0.762) (layer B.SilkS) (width 0.15))
(pad 1 smd rect (at -0.9525 0 270) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(pad 1 smd rect (at -0.9525 0 90) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(net 22 +5V))
(pad 2 smd rect (at 0.9525 0 270) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(pad 2 smd rect (at 0.9525 0 90) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(net 21 GNDA))
(model MLAB_3D/Resistors/chip_cms.wrl
(at (xyz 0 0 0))
610,13 → 610,13
)
 
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 5479A972)
(at 66.675 117.0305 270)
(at 36.703 -9.017 90)
(path /546DB276)
(attr smd)
(fp_text reference C15 (at 0 0.3175 270) (layer B.SilkS)
(fp_text reference C15 (at 0 0.3175 90) (layer B.SilkS)
(effects (font (size 0.50038 0.50038) (thickness 0.10922)) (justify mirror))
)
(fp_text value 4n7 (at 0.127 -0.381 270) (layer B.SilkS)
(fp_text value 4n7 (at 0.127 -0.381 90) (layer B.SilkS)
(effects (font (size 0.50038 0.50038) (thickness 0.10922)) (justify mirror))
)
(fp_circle (center -1.651 -0.762) (end -1.651 -0.635) (layer B.SilkS) (width 0.15))
626,9 → 626,9
(fp_line (start 0.508 0.762) (end 1.524 0.762) (layer B.SilkS) (width 0.15))
(fp_line (start 1.524 0.762) (end 1.524 -0.762) (layer B.SilkS) (width 0.15))
(fp_line (start 1.524 -0.762) (end 0.508 -0.762) (layer B.SilkS) (width 0.15))
(pad 1 smd rect (at -0.9525 0 270) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(pad 1 smd rect (at -0.9525 0 90) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(net 23 /AINR-))
(pad 2 smd rect (at 0.9525 0 270) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(pad 2 smd rect (at 0.9525 0 90) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(net 24 /AINR+))
(model MLAB_3D/Resistors/chip_cms.wrl
(at (xyz 0 0 0))
638,7 → 638,7
)
 
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 5479A978)
(at 60.6425 88.0745 90)
(at 37.084 -30.48 90)
(path /546DB291)
(attr smd)
(fp_text reference C16 (at 0 0.3175 90) (layer B.SilkS)
666,7 → 666,7
)
 
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 5479A97E)
(at 77.1525 98.4885)
(at 51.308 -17.78)
(path /546DB2D1)
(attr smd)
(fp_text reference C17 (at 0 0.3175) (layer B.SilkS)
693,14 → 693,14
)
)
 
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 5479A984)
(at 118.999 52.451)
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 547AFA26)
(at 60.833 -32.766 90)
(path /5479B8D7)
(attr smd)
(fp_text reference C18 (at 0 0.3175) (layer B.SilkS)
(fp_text reference C18 (at 0 0.3175 90) (layer B.SilkS)
(effects (font (size 0.50038 0.50038) (thickness 0.10922)) (justify mirror))
)
(fp_text value 100n (at 0.127 -0.381) (layer B.SilkS)
(fp_text value 100n (at 0.127 -0.381 90) (layer B.SilkS)
(effects (font (size 0.50038 0.50038) (thickness 0.10922)) (justify mirror))
)
(fp_circle (center -1.651 -0.762) (end -1.651 -0.635) (layer B.SilkS) (width 0.15))
710,9 → 710,9
(fp_line (start 0.508 0.762) (end 1.524 0.762) (layer B.SilkS) (width 0.15))
(fp_line (start 1.524 0.762) (end 1.524 -0.762) (layer B.SilkS) (width 0.15))
(fp_line (start 1.524 -0.762) (end 0.508 -0.762) (layer B.SilkS) (width 0.15))
(pad 1 smd rect (at -0.9525 0) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(pad 1 smd rect (at -0.9525 0 90) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(net 28 +3.3V))
(pad 2 smd rect (at 0.9525 0) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(pad 2 smd rect (at 0.9525 0 90) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(net 27 DGND))
(model MLAB_3D/Resistors/chip_cms.wrl
(at (xyz 0 0 0))
721,14 → 721,14
)
)
 
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 5479A98A)
(at 77.089 95.885)
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 547AFB70)
(at 49.53 -31.75 180)
(path /546DB2BE)
(attr smd)
(fp_text reference C19 (at 0 0.3175) (layer B.SilkS)
(fp_text reference C19 (at 0 0.3175 180) (layer B.SilkS)
(effects (font (size 0.50038 0.50038) (thickness 0.10922)) (justify mirror))
)
(fp_text value 4u7 (at 0.127 -0.381) (layer B.SilkS)
(fp_text value 4u7 (at 0.127 -0.381 180) (layer B.SilkS)
(effects (font (size 0.50038 0.50038) (thickness 0.10922)) (justify mirror))
)
(fp_circle (center -1.651 -0.762) (end -1.651 -0.635) (layer B.SilkS) (width 0.15))
738,9 → 738,9
(fp_line (start 0.508 0.762) (end 1.524 0.762) (layer B.SilkS) (width 0.15))
(fp_line (start 1.524 0.762) (end 1.524 -0.762) (layer B.SilkS) (width 0.15))
(fp_line (start 1.524 -0.762) (end 0.508 -0.762) (layer B.SilkS) (width 0.15))
(pad 1 smd rect (at -0.9525 0) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(pad 1 smd rect (at -0.9525 0 180) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(net 22 +5V))
(pad 2 smd rect (at 0.9525 0) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(pad 2 smd rect (at 0.9525 0 180) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(net 21 GNDA))
(model MLAB_3D/Resistors/chip_cms.wrl
(at (xyz 0 0 0))
749,8 → 749,8
)
)
 
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 5479A990)
(at 217.17 138.557)
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 547AFFC9)
(at 48.895 -6.604)
(path /546DB2A8)
(attr smd)
(fp_text reference C20 (at 0 0.3175) (layer B.SilkS)
778,28 → 778,28
)
 
(module MLAB_C:TantalC_SizeC_Reflow (layer B.Cu) (tedit 54799D04) (tstamp 5479A996)
(at 229.5525 136.144 90)
(at 49.149 -3.429)
(descr "Tantal Cap. , Size C, EIA-6032, Reflow,")
(tags "Tantal Cap. , Size C, EIA-6032, Reflow,")
(path /546DB2A9)
(attr smd)
(fp_text reference C21 (at -0.20066 3.29946 90) (layer B.SilkS)
(fp_text reference C21 (at -0.20066 3.29946) (layer B.SilkS)
(effects (font (thickness 0.3048)) (justify mirror))
)
(fp_text value 47u (at -0.09906 -3.59918 90) (layer B.SilkS) hide
(fp_text value 47u (at -0.09906 -3.59918) (layer B.SilkS) hide
(effects (font (thickness 0.3048)) (justify mirror))
)
(fp_line (start -4.30022 1.69926) (end -4.30022 -1.69926) (layer B.SilkS) (width 0.15))
(fp_line (start 2.99974 -1.69926) (end -2.99974 -1.69926) (layer B.SilkS) (width 0.15))
(fp_line (start 2.99974 1.69926) (end -2.99974 1.69926) (layer B.SilkS) (width 0.15))
(fp_text user + (at -4.99872 2.55016 90) (layer B.SilkS)
(fp_text user + (at -4.99872 2.55016) (layer B.SilkS)
(effects (font (thickness 0.3048)) (justify mirror))
)
(fp_line (start -5.00126 3.05308) (end -5.00126 1.95326) (layer B.SilkS) (width 0.15))
(fp_line (start -5.6007 2.5527) (end -4.40182 2.5527) (layer B.SilkS) (width 0.15))
(pad 2 smd rect (at 2.52476 0 90) (size 2.55016 2.49936) (layers B.Cu B.Paste B.Mask)
(pad 2 smd rect (at 2.52476 0) (size 2.55016 2.49936) (layers B.Cu B.Paste B.Mask)
(net 27 DGND))
(pad 1 smd rect (at -2.52476 0 90) (size 2.55016 2.49936) (layers B.Cu B.Paste B.Mask)
(pad 1 smd rect (at -2.52476 0) (size 2.55016 2.49936) (layers B.Cu B.Paste B.Mask)
(net 22 +5V))
(model MLAB_3D/Capacitors/c_tant_C.wrl
(at (xyz 0 0 0))
809,13 → 809,13
)
 
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 5479A99C)
(at 225.044 134.747 90)
(at 41.275 -6.604 180)
(path /546DB2AA)
(attr smd)
(fp_text reference C22 (at 0 0.3175 90) (layer B.SilkS)
(fp_text reference C22 (at 0 0.3175 180) (layer B.SilkS)
(effects (font (size 0.50038 0.50038) (thickness 0.10922)) (justify mirror))
)
(fp_text value 100n (at 0.127 -0.381 90) (layer B.SilkS)
(fp_text value 100n (at 0.127 -0.381 180) (layer B.SilkS)
(effects (font (size 0.50038 0.50038) (thickness 0.10922)) (justify mirror))
)
(fp_circle (center -1.651 -0.762) (end -1.651 -0.635) (layer B.SilkS) (width 0.15))
825,9 → 825,9
(fp_line (start 0.508 0.762) (end 1.524 0.762) (layer B.SilkS) (width 0.15))
(fp_line (start 1.524 0.762) (end 1.524 -0.762) (layer B.SilkS) (width 0.15))
(fp_line (start 1.524 -0.762) (end 0.508 -0.762) (layer B.SilkS) (width 0.15))
(pad 1 smd rect (at -0.9525 0 90) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(pad 1 smd rect (at -0.9525 0 180) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(net 22 +5V))
(pad 2 smd rect (at 0.9525 0 90) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(pad 2 smd rect (at 0.9525 0 180) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(net 21 GNDA))
(model MLAB_3D/Resistors/chip_cms.wrl
(at (xyz 0 0 0))
837,28 → 837,28
)
 
(module MLAB_C:TantalC_SizeC_Reflow (layer B.Cu) (tedit 54799D04) (tstamp 5479A9A2)
(at 222.3135 135.3185 90)
(at 38.608 -3.429 180)
(descr "Tantal Cap. , Size C, EIA-6032, Reflow,")
(tags "Tantal Cap. , Size C, EIA-6032, Reflow,")
(path /546DB2AB)
(attr smd)
(fp_text reference C23 (at -0.20066 3.29946 90) (layer B.SilkS)
(fp_text reference C23 (at -0.20066 3.29946 180) (layer B.SilkS)
(effects (font (thickness 0.3048)) (justify mirror))
)
(fp_text value 47u (at -0.09906 -3.59918 90) (layer B.SilkS) hide
(fp_text value 47u (at -0.09906 -3.59918 180) (layer B.SilkS) hide
(effects (font (thickness 0.3048)) (justify mirror))
)
(fp_line (start -4.30022 1.69926) (end -4.30022 -1.69926) (layer B.SilkS) (width 0.15))
(fp_line (start 2.99974 -1.69926) (end -2.99974 -1.69926) (layer B.SilkS) (width 0.15))
(fp_line (start 2.99974 1.69926) (end -2.99974 1.69926) (layer B.SilkS) (width 0.15))
(fp_text user + (at -4.99872 2.55016 90) (layer B.SilkS)
(fp_text user + (at -4.99872 2.55016 180) (layer B.SilkS)
(effects (font (thickness 0.3048)) (justify mirror))
)
(fp_line (start -5.00126 3.05308) (end -5.00126 1.95326) (layer B.SilkS) (width 0.15))
(fp_line (start -5.6007 2.5527) (end -4.40182 2.5527) (layer B.SilkS) (width 0.15))
(pad 2 smd rect (at 2.52476 0 90) (size 2.55016 2.49936) (layers B.Cu B.Paste B.Mask)
(pad 2 smd rect (at 2.52476 0 180) (size 2.55016 2.49936) (layers B.Cu B.Paste B.Mask)
(net 21 GNDA))
(pad 1 smd rect (at -2.52476 0 90) (size 2.55016 2.49936) (layers B.Cu B.Paste B.Mask)
(pad 1 smd rect (at -2.52476 0 180) (size 2.55016 2.49936) (layers B.Cu B.Paste B.Mask)
(net 22 +5V))
(model MLAB_3D/Capacitors/c_tant_C.wrl
(at (xyz 0 0 0))
868,18 → 868,18
)
 
(module MLAB_C:TantalC_SizeB_Reflow (layer B.Cu) (tedit 54799CFA) (tstamp 5479A9A8)
(at 126.873 66.7385)
(at 33.909 -25.4 270)
(descr "Tantal Cap. , Size B, EIA-3528, Reflow,")
(tags "Tantal Cap. , Size B, EIA-3528, Reflow,")
(path /546DB2D6)
(attr smd)
(fp_text reference C24 (at 0 3.302) (layer B.SilkS)
(fp_text reference C24 (at 0 3.302 270) (layer B.SilkS)
(effects (font (thickness 0.3048)) (justify mirror))
)
(fp_text value 10u (at 0.254 -3.556) (layer B.SilkS) hide
(fp_text value 10u (at 0.254 -3.556 270) (layer B.SilkS) hide
(effects (font (thickness 0.3048)) (justify mirror))
)
(fp_text user + (at 3.59918 -2.49936 180) (layer B.SilkS)
(fp_text user + (at 3.59918 -2.49936 450) (layer B.SilkS)
(effects (font (thickness 0.3048)) (justify mirror))
)
(fp_line (start 2.99974 -1.89992) (end 2.99974 1.89992) (layer B.SilkS) (width 0.15))
887,9 → 887,9
(fp_line (start -2.49682 1.89992) (end 2.5019 1.89992) (layer B.SilkS) (width 0.15))
(fp_line (start 3.60172 -3.00228) (end 3.60172 -1.90246) (layer B.SilkS) (width 0.15))
(fp_line (start 4.20116 -2.5019) (end 3.00228 -2.5019) (layer B.SilkS) (width 0.15))
(pad 2 smd rect (at -1.5494 0 180) (size 1.95072 2.49936) (layers B.Cu B.Paste B.Mask)
(pad 2 smd rect (at -1.5494 0 90) (size 1.95072 2.49936) (layers B.Cu B.Paste B.Mask)
(net 21 GNDA))
(pad 1 smd rect (at 1.5494 0 180) (size 1.95072 2.49936) (layers B.Cu B.Paste B.Mask)
(pad 1 smd rect (at 1.5494 0 90) (size 1.95072 2.49936) (layers B.Cu B.Paste B.Mask)
(net 29 /VMIO))
(model MLAB_3D/Capacitors/c_tant_B.wrl
(at (xyz 0 0 0))
898,19 → 898,19
)
)
 
(module MLAB_C:TantalC_SizeB_Reflow (layer B.Cu) (tedit 54799CFA) (tstamp 5479A9AE)
(at 148.59 51.4985)
(module MLAB_C:TantalC_SizeB_Reflow (layer B.Cu) (tedit 54799CFA) (tstamp 547AF57C)
(at 41.91 -19.05 90)
(descr "Tantal Cap. , Size B, EIA-3528, Reflow,")
(tags "Tantal Cap. , Size B, EIA-3528, Reflow,")
(path /546DB2D2)
(attr smd)
(fp_text reference C25 (at 0 3.302) (layer B.SilkS)
(fp_text reference C25 (at 0 3.302 90) (layer B.SilkS)
(effects (font (thickness 0.3048)) (justify mirror))
)
(fp_text value 10u (at 0.254 -3.556) (layer B.SilkS) hide
(fp_text value 10u (at 0.254 -3.556 90) (layer B.SilkS) hide
(effects (font (thickness 0.3048)) (justify mirror))
)
(fp_text user + (at 3.59918 -2.49936 180) (layer B.SilkS)
(fp_text user + (at 3.59918 -2.49936 270) (layer B.SilkS)
(effects (font (thickness 0.3048)) (justify mirror))
)
(fp_line (start 2.99974 -1.89992) (end 2.99974 1.89992) (layer B.SilkS) (width 0.15))
918,9 → 918,9
(fp_line (start -2.49682 1.89992) (end 2.5019 1.89992) (layer B.SilkS) (width 0.15))
(fp_line (start 3.60172 -3.00228) (end 3.60172 -1.90246) (layer B.SilkS) (width 0.15))
(fp_line (start 4.20116 -2.5019) (end 3.00228 -2.5019) (layer B.SilkS) (width 0.15))
(pad 2 smd rect (at -1.5494 0 180) (size 1.95072 2.49936) (layers B.Cu B.Paste B.Mask)
(pad 2 smd rect (at -1.5494 0 270) (size 1.95072 2.49936) (layers B.Cu B.Paste B.Mask)
(net 21 GNDA))
(pad 1 smd rect (at 1.5494 0 180) (size 1.95072 2.49936) (layers B.Cu B.Paste B.Mask)
(pad 1 smd rect (at 1.5494 0 270) (size 1.95072 2.49936) (layers B.Cu B.Paste B.Mask)
(net 30 /VREF))
(model MLAB_3D/Capacitors/c_tant_B.wrl
(at (xyz 0 0 0))
930,18 → 930,18
)
 
(module MLAB_C:TantalC_SizeB_Reflow (layer B.Cu) (tedit 54799CFA) (tstamp 5479A9B4)
(at 250.063 137.795 90)
(at 55.372 -14.097 180)
(descr "Tantal Cap. , Size B, EIA-3528, Reflow,")
(tags "Tantal Cap. , Size B, EIA-3528, Reflow,")
(path /546DB2BB)
(attr smd)
(fp_text reference C26 (at 0 3.302 90) (layer B.SilkS)
(fp_text reference C26 (at 0 3.302 180) (layer B.SilkS)
(effects (font (thickness 0.3048)) (justify mirror))
)
(fp_text value 10u (at 0.254 -3.556 90) (layer B.SilkS) hide
(fp_text value 10u (at 0.254 -3.556 180) (layer B.SilkS) hide
(effects (font (thickness 0.3048)) (justify mirror))
)
(fp_text user + (at 3.59918 -2.49936 270) (layer B.SilkS)
(fp_text user + (at 3.59918 -2.49936 360) (layer B.SilkS)
(effects (font (thickness 0.3048)) (justify mirror))
)
(fp_line (start 2.99974 -1.89992) (end 2.99974 1.89992) (layer B.SilkS) (width 0.15))
949,9 → 949,9
(fp_line (start -2.49682 1.89992) (end 2.5019 1.89992) (layer B.SilkS) (width 0.15))
(fp_line (start 3.60172 -3.00228) (end 3.60172 -1.90246) (layer B.SilkS) (width 0.15))
(fp_line (start 4.20116 -2.5019) (end 3.00228 -2.5019) (layer B.SilkS) (width 0.15))
(pad 2 smd rect (at -1.5494 0 270) (size 1.95072 2.49936) (layers B.Cu B.Paste B.Mask)
(pad 2 smd rect (at -1.5494 0) (size 1.95072 2.49936) (layers B.Cu B.Paste B.Mask)
(net 27 DGND))
(pad 1 smd rect (at 1.5494 0 270) (size 1.95072 2.49936) (layers B.Cu B.Paste B.Mask)
(pad 1 smd rect (at 1.5494 0) (size 1.95072 2.49936) (layers B.Cu B.Paste B.Mask)
(net 28 +3.3V))
(model MLAB_3D/Capacitors/c_tant_B.wrl
(at (xyz 0 0 0))
960,19 → 960,19
)
)
 
(module MLAB_C:TantalC_SizeB_Reflow (layer B.Cu) (tedit 54799CFA) (tstamp 5479A9BA)
(at 126.746 72.009)
(module MLAB_C:TantalC_SizeB_Reflow (layer B.Cu) (tedit 54799CFA) (tstamp 547AF54A)
(at 37.973 -25.4 270)
(descr "Tantal Cap. , Size B, EIA-3528, Reflow,")
(tags "Tantal Cap. , Size B, EIA-3528, Reflow,")
(path /546DB2D7)
(attr smd)
(fp_text reference C27 (at 0 3.302) (layer B.SilkS)
(fp_text reference C27 (at 0 3.302 270) (layer B.SilkS)
(effects (font (thickness 0.3048)) (justify mirror))
)
(fp_text value 10u (at 0.254 -3.556) (layer B.SilkS) hide
(fp_text value 10u (at 0.254 -3.556 270) (layer B.SilkS) hide
(effects (font (thickness 0.3048)) (justify mirror))
)
(fp_text user + (at 3.59918 -2.49936 180) (layer B.SilkS)
(fp_text user + (at 3.59918 -2.49936 450) (layer B.SilkS)
(effects (font (thickness 0.3048)) (justify mirror))
)
(fp_line (start 2.99974 -1.89992) (end 2.99974 1.89992) (layer B.SilkS) (width 0.15))
980,9 → 980,9
(fp_line (start -2.49682 1.89992) (end 2.5019 1.89992) (layer B.SilkS) (width 0.15))
(fp_line (start 3.60172 -3.00228) (end 3.60172 -1.90246) (layer B.SilkS) (width 0.15))
(fp_line (start 4.20116 -2.5019) (end 3.00228 -2.5019) (layer B.SilkS) (width 0.15))
(pad 2 smd rect (at -1.5494 0 180) (size 1.95072 2.49936) (layers B.Cu B.Paste B.Mask)
(pad 2 smd rect (at -1.5494 0 90) (size 1.95072 2.49936) (layers B.Cu B.Paste B.Mask)
(net 21 GNDA))
(pad 1 smd rect (at 1.5494 0 180) (size 1.95072 2.49936) (layers B.Cu B.Paste B.Mask)
(pad 1 smd rect (at 1.5494 0 90) (size 1.95072 2.49936) (layers B.Cu B.Paste B.Mask)
(net 29 /VMIO))
(model MLAB_3D/Capacitors/c_tant_B.wrl
(at (xyz 0 0 0))
991,19 → 991,19
)
)
 
(module MLAB_C:TantalC_SizeB_Reflow (layer B.Cu) (tedit 54799CFA) (tstamp 5479A9C0)
(at 148.5265 64.3255)
(module MLAB_C:TantalC_SizeB_Reflow (layer B.Cu) (tedit 54799CFA) (tstamp 547AF5EB)
(at 37.846 -19.05 90)
(descr "Tantal Cap. , Size B, EIA-3528, Reflow,")
(tags "Tantal Cap. , Size B, EIA-3528, Reflow,")
(path /546DB2D3)
(attr smd)
(fp_text reference C28 (at 0 3.302) (layer B.SilkS)
(fp_text reference C28 (at 0 3.302 90) (layer B.SilkS)
(effects (font (thickness 0.3048)) (justify mirror))
)
(fp_text value 10u (at 0.254 -3.556) (layer B.SilkS) hide
(fp_text value 10u (at 0.254 -3.556 90) (layer B.SilkS) hide
(effects (font (thickness 0.3048)) (justify mirror))
)
(fp_text user + (at 3.59918 -2.49936 180) (layer B.SilkS)
(fp_text user + (at 3.59918 -2.49936 270) (layer B.SilkS)
(effects (font (thickness 0.3048)) (justify mirror))
)
(fp_line (start 2.99974 -1.89992) (end 2.99974 1.89992) (layer B.SilkS) (width 0.15))
1011,9 → 1011,9
(fp_line (start -2.49682 1.89992) (end 2.5019 1.89992) (layer B.SilkS) (width 0.15))
(fp_line (start 3.60172 -3.00228) (end 3.60172 -1.90246) (layer B.SilkS) (width 0.15))
(fp_line (start 4.20116 -2.5019) (end 3.00228 -2.5019) (layer B.SilkS) (width 0.15))
(pad 2 smd rect (at -1.5494 0 180) (size 1.95072 2.49936) (layers B.Cu B.Paste B.Mask)
(pad 2 smd rect (at -1.5494 0 270) (size 1.95072 2.49936) (layers B.Cu B.Paste B.Mask)
(net 21 GNDA))
(pad 1 smd rect (at 1.5494 0 180) (size 1.95072 2.49936) (layers B.Cu B.Paste B.Mask)
(pad 1 smd rect (at 1.5494 0 270) (size 1.95072 2.49936) (layers B.Cu B.Paste B.Mask)
(net 30 /VREF))
(model MLAB_3D/Capacitors/c_tant_B.wrl
(at (xyz 0 0 0))
1023,18 → 1023,18
)
 
(module MLAB_C:TantalC_SizeB_Reflow (layer B.Cu) (tedit 54799CFA) (tstamp 5479A9C6)
(at 126.9365 76.454)
(at 42.037 -25.4 270)
(descr "Tantal Cap. , Size B, EIA-3528, Reflow,")
(tags "Tantal Cap. , Size B, EIA-3528, Reflow,")
(path /546DB2D8)
(attr smd)
(fp_text reference C29 (at 0 3.302) (layer B.SilkS)
(fp_text reference C29 (at 0 3.302 270) (layer B.SilkS)
(effects (font (thickness 0.3048)) (justify mirror))
)
(fp_text value 10u (at 0.254 -3.556) (layer B.SilkS) hide
(fp_text value 10u (at 0.254 -3.556 270) (layer B.SilkS) hide
(effects (font (thickness 0.3048)) (justify mirror))
)
(fp_text user + (at 3.59918 -2.49936 180) (layer B.SilkS)
(fp_text user + (at 3.59918 -2.49936 450) (layer B.SilkS)
(effects (font (thickness 0.3048)) (justify mirror))
)
(fp_line (start 2.99974 -1.89992) (end 2.99974 1.89992) (layer B.SilkS) (width 0.15))
1042,9 → 1042,9
(fp_line (start -2.49682 1.89992) (end 2.5019 1.89992) (layer B.SilkS) (width 0.15))
(fp_line (start 3.60172 -3.00228) (end 3.60172 -1.90246) (layer B.SilkS) (width 0.15))
(fp_line (start 4.20116 -2.5019) (end 3.00228 -2.5019) (layer B.SilkS) (width 0.15))
(pad 2 smd rect (at -1.5494 0 180) (size 1.95072 2.49936) (layers B.Cu B.Paste B.Mask)
(pad 2 smd rect (at -1.5494 0 90) (size 1.95072 2.49936) (layers B.Cu B.Paste B.Mask)
(net 21 GNDA))
(pad 1 smd rect (at 1.5494 0 180) (size 1.95072 2.49936) (layers B.Cu B.Paste B.Mask)
(pad 1 smd rect (at 1.5494 0 90) (size 1.95072 2.49936) (layers B.Cu B.Paste B.Mask)
(net 29 /VMIO))
(model MLAB_3D/Capacitors/c_tant_B.wrl
(at (xyz 0 0 0))
1054,18 → 1054,18
)
 
(module MLAB_C:TantalC_SizeB_Reflow (layer B.Cu) (tedit 54799CFA) (tstamp 5479A9CC)
(at 148.717 56.007)
(at 33.782 -19.05 90)
(descr "Tantal Cap. , Size B, EIA-3528, Reflow,")
(tags "Tantal Cap. , Size B, EIA-3528, Reflow,")
(path /546DB2D4)
(attr smd)
(fp_text reference C30 (at 0 3.302) (layer B.SilkS)
(fp_text reference C30 (at 0 3.302 90) (layer B.SilkS)
(effects (font (thickness 0.3048)) (justify mirror))
)
(fp_text value 10u (at 0.254 -3.556) (layer B.SilkS) hide
(fp_text value 10u (at 0.254 -3.556 90) (layer B.SilkS) hide
(effects (font (thickness 0.3048)) (justify mirror))
)
(fp_text user + (at 3.59918 -2.49936 180) (layer B.SilkS)
(fp_text user + (at 3.59918 -2.49936 270) (layer B.SilkS)
(effects (font (thickness 0.3048)) (justify mirror))
)
(fp_line (start 2.99974 -1.89992) (end 2.99974 1.89992) (layer B.SilkS) (width 0.15))
1073,9 → 1073,9
(fp_line (start -2.49682 1.89992) (end 2.5019 1.89992) (layer B.SilkS) (width 0.15))
(fp_line (start 3.60172 -3.00228) (end 3.60172 -1.90246) (layer B.SilkS) (width 0.15))
(fp_line (start 4.20116 -2.5019) (end 3.00228 -2.5019) (layer B.SilkS) (width 0.15))
(pad 2 smd rect (at -1.5494 0 180) (size 1.95072 2.49936) (layers B.Cu B.Paste B.Mask)
(pad 2 smd rect (at -1.5494 0 270) (size 1.95072 2.49936) (layers B.Cu B.Paste B.Mask)
(net 21 GNDA))
(pad 1 smd rect (at 1.5494 0 180) (size 1.95072 2.49936) (layers B.Cu B.Paste B.Mask)
(pad 1 smd rect (at 1.5494 0 270) (size 1.95072 2.49936) (layers B.Cu B.Paste B.Mask)
(net 30 /VREF))
(model MLAB_3D/Capacitors/c_tant_B.wrl
(at (xyz 0 0 0))
1084,14 → 1084,14
)
)
 
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 5479A9D2)
(at 43.053 99.7585)
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 547AF646)
(at 19.558 -23.876 180)
(path /546DB2A1)
(attr smd)
(fp_text reference C31 (at 0 0.3175) (layer B.SilkS)
(fp_text reference C31 (at 0 0.3175 180) (layer B.SilkS)
(effects (font (size 0.50038 0.50038) (thickness 0.10922)) (justify mirror))
)
(fp_text value 100n (at 0.127 -0.381) (layer B.SilkS)
(fp_text value 100n (at 0.127 -0.381 180) (layer B.SilkS)
(effects (font (size 0.50038 0.50038) (thickness 0.10922)) (justify mirror))
)
(fp_circle (center -1.651 -0.762) (end -1.651 -0.635) (layer B.SilkS) (width 0.15))
1101,9 → 1101,9
(fp_line (start 0.508 0.762) (end 1.524 0.762) (layer B.SilkS) (width 0.15))
(fp_line (start 1.524 0.762) (end 1.524 -0.762) (layer B.SilkS) (width 0.15))
(fp_line (start 1.524 -0.762) (end 0.508 -0.762) (layer B.SilkS) (width 0.15))
(pad 1 smd rect (at -0.9525 0) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(pad 1 smd rect (at -0.9525 0 180) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(net 31 /AVDD/2))
(pad 2 smd rect (at 0.9525 0) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(pad 2 smd rect (at 0.9525 0 180) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(net 21 GNDA))
(model MLAB_3D/Resistors/chip_cms.wrl
(at (xyz 0 0 0))
1113,13 → 1113,13
)
 
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 5479A9D8)
(at 148.6535 60.1345 180)
(at 45.466 -20.447 270)
(path /546DB2D5)
(attr smd)
(fp_text reference C32 (at 0 0.3175 180) (layer B.SilkS)
(fp_text reference C32 (at 0 0.3175 270) (layer B.SilkS)
(effects (font (size 0.50038 0.50038) (thickness 0.10922)) (justify mirror))
)
(fp_text value 100n (at 0.127 -0.381 180) (layer B.SilkS)
(fp_text value 100n (at 0.127 -0.381 270) (layer B.SilkS)
(effects (font (size 0.50038 0.50038) (thickness 0.10922)) (justify mirror))
)
(fp_circle (center -1.651 -0.762) (end -1.651 -0.635) (layer B.SilkS) (width 0.15))
1129,9 → 1129,9
(fp_line (start 0.508 0.762) (end 1.524 0.762) (layer B.SilkS) (width 0.15))
(fp_line (start 1.524 0.762) (end 1.524 -0.762) (layer B.SilkS) (width 0.15))
(fp_line (start 1.524 -0.762) (end 0.508 -0.762) (layer B.SilkS) (width 0.15))
(pad 1 smd rect (at -0.9525 0 180) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(pad 1 smd rect (at -0.9525 0 270) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(net 30 /VREF))
(pad 2 smd rect (at 0.9525 0 180) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(pad 2 smd rect (at 0.9525 0 270) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(net 21 GNDA))
(model MLAB_3D/Resistors/chip_cms.wrl
(at (xyz 0 0 0))
1141,13 → 1141,13
)
 
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 5479A9DE)
(at 126.619 80.137 180)
(at 45.339 -25.273 90)
(path /546DB2D9)
(attr smd)
(fp_text reference C33 (at 0 0.3175 180) (layer B.SilkS)
(fp_text reference C33 (at 0 0.3175 90) (layer B.SilkS)
(effects (font (size 0.50038 0.50038) (thickness 0.10922)) (justify mirror))
)
(fp_text value 100n (at 0.127 -0.381 180) (layer B.SilkS)
(fp_text value 100n (at 0.127 -0.381 90) (layer B.SilkS)
(effects (font (size 0.50038 0.50038) (thickness 0.10922)) (justify mirror))
)
(fp_circle (center -1.651 -0.762) (end -1.651 -0.635) (layer B.SilkS) (width 0.15))
1157,9 → 1157,9
(fp_line (start 0.508 0.762) (end 1.524 0.762) (layer B.SilkS) (width 0.15))
(fp_line (start 1.524 0.762) (end 1.524 -0.762) (layer B.SilkS) (width 0.15))
(fp_line (start 1.524 -0.762) (end 0.508 -0.762) (layer B.SilkS) (width 0.15))
(pad 1 smd rect (at -0.9525 0 180) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(pad 1 smd rect (at -0.9525 0 90) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(net 29 /VMIO))
(pad 2 smd rect (at 0.9525 0 180) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(pad 2 smd rect (at 0.9525 0 90) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(net 21 GNDA))
(model MLAB_3D/Resistors/chip_cms.wrl
(at (xyz 0 0 0))
1168,8 → 1168,8
)
)
 
(module MLAB_C:TantalC_SizeB_Reflow (layer B.Cu) (tedit 54799CFA) (tstamp 5479A9E4)
(at 43.688 105.537)
(module MLAB_C:TantalC_SizeB_Reflow (layer B.Cu) (tedit 54799CFA) (tstamp 547AF6C7)
(at 18.415 -18.796)
(descr "Tantal Cap. , Size B, EIA-3528, Reflow,")
(tags "Tantal Cap. , Size B, EIA-3528, Reflow,")
(path /546DB2A0)
1200,21 → 1200,21
)
 
(module MLAB_D:Diode-SMA_Standard (layer B.Cu) (tedit 54799A7E) (tstamp 5479A9EA)
(at 211.836 135.128 90)
(at 60.833 -10.795 180)
(descr "Diode SMA")
(tags "Diode SMA")
(path /546DB2A7)
(attr smd)
(fp_text reference D1 (at 0 3.81 90) (layer B.SilkS)
(fp_text reference D1 (at 0 3.81 180) (layer B.SilkS)
(effects (font (thickness 0.3048)) (justify mirror))
)
(fp_text value M4 (at 0 -3.81 90) (layer B.SilkS) hide
(fp_text value M4 (at 0 -3.81 180) (layer B.SilkS) hide
(effects (font (thickness 0.3048)) (justify mirror))
)
(fp_text user A (at -3.29946 -1.6002 90) (layer B.SilkS)
(fp_text user A (at -3.29946 -1.6002 180) (layer B.SilkS)
(effects (font (size 0.50038 0.50038) (thickness 0.09906)) (justify mirror))
)
(fp_text user K (at 2.99974 -1.69926 90) (layer B.SilkS)
(fp_text user K (at 2.99974 -1.69926 180) (layer B.SilkS)
(effects (font (size 0.50038 0.50038) (thickness 0.09906)) (justify mirror))
)
(fp_circle (center 0 0) (end 0.20066 0.0508) (layer B.Adhes) (width 0.381))
1226,9 → 1226,9
(fp_line (start 2.25044 1.75006) (end 2.25044 1.39954) (layer B.SilkS) (width 0.15))
(fp_line (start -2.25044 -1.75006) (end 2.25044 -1.75006) (layer B.SilkS) (width 0.15))
(fp_line (start -2.25044 1.75006) (end 2.25044 1.75006) (layer B.SilkS) (width 0.15))
(pad 1 smd rect (at -1.99898 0 90) (size 2.49936 1.80086) (layers B.Cu B.Paste B.Mask)
(pad 1 smd rect (at -1.99898 0 180) (size 2.49936 1.80086) (layers B.Cu B.Paste B.Mask)
(net 27 DGND))
(pad 2 smd rect (at 1.99898 0 90) (size 2.49936 1.80086) (layers B.Cu B.Paste B.Mask)
(pad 2 smd rect (at 1.99898 0 180) (size 2.49936 1.80086) (layers B.Cu B.Paste B.Mask)
(net 32 "Net-(D1-Pad2)"))
(model MLAB_3D/Diodes/SMA.wrl
(at (xyz 0 0 0))
1238,7 → 1238,7
)
 
(module Hrebinky:Pin_Header_Straight_2x04 placed (layer F.Cu) (tedit 53F5A6CB) (tstamp 5479A9F6)
(at 28.0035 116.5225 270)
(at 4.953 -14.478 270)
(descr "1 pin")
(tags "CONN DEV")
(path /546DB278)
1287,7 → 1287,7
)
 
(module Hrebinky:Pin_Header_Straight_2x04 placed (layer F.Cu) (tedit 53F5A6CB) (tstamp 5479AA02)
(at 22.606 86.1695 270)
(at 4.953 -25.781 270)
(descr "1 pin")
(tags "CONN DEV")
(path /546DB293)
1336,14 → 1336,14
)
 
(module Hrebinky:Pin_Header_Straight_2x03 placed (layer F.Cu) (tedit 5479A04A) (tstamp 5479AA0C)
(at 205.994 134.4295 90)
(at 57.404 -5.207 180)
(descr "1 pin")
(tags "CONN DEV")
(path /546DB2AD)
(fp_text reference J3 (at 0 -3.81 90) (layer F.SilkS)
(fp_text reference J3 (at 0 -3.81 180) (layer F.SilkS)
(effects (font (size 1.27 1.27) (thickness 0.2032)))
)
(fp_text value JUMP_3X2 (at 0 0 90) (layer F.SilkS) hide
(fp_text value JUMP_3X2 (at 0 0 180) (layer F.SilkS) hide
(effects (font (size 1.27 1.27) (thickness 0.2032)))
)
(fp_line (start -3.81 2.54) (end 3.81 2.54) (layer F.SilkS) (width 0.254))
1352,17 → 1352,17
(fp_line (start -3.81 2.54) (end -3.81 0) (layer F.SilkS) (width 0.254))
(fp_line (start -3.81 -2.54) (end -3.81 0) (layer F.SilkS) (width 0.254))
(fp_line (start -1.27 -2.54) (end -3.81 -2.54) (layer F.SilkS) (width 0.254))
(pad 1 thru_hole rect (at -2.54 1.27 90) (size 1.651 1.651) (drill 0.9) (layers *.Cu *.Mask F.SilkS)
(pad 1 thru_hole rect (at -2.54 1.27 180) (size 1.651 1.651) (drill 0.9) (layers *.Cu *.Mask F.SilkS)
(net 27 DGND))
(pad 2 thru_hole rect (at 0 1.27 90) (size 1.651 1.651) (drill 0.9) (layers *.Cu *.Mask F.SilkS)
(pad 2 thru_hole rect (at 0 1.27 180) (size 1.651 1.651) (drill 0.9) (layers *.Cu *.Mask F.SilkS)
(net 32 "Net-(D1-Pad2)"))
(pad 3 thru_hole rect (at 2.54 1.27 90) (size 1.651 1.651) (drill 0.9) (layers *.Cu *.Mask F.SilkS)
(pad 3 thru_hole rect (at 2.54 1.27 180) (size 1.651 1.651) (drill 0.9) (layers *.Cu *.Mask F.SilkS)
(net 27 DGND))
(pad 4 thru_hole rect (at 2.54 -1.27 90) (size 1.651 1.651) (drill 0.9) (layers *.Cu *.Mask F.SilkS)
(pad 4 thru_hole rect (at 2.54 -1.27 180) (size 1.651 1.651) (drill 0.9) (layers *.Cu *.Mask F.SilkS)
(net 27 DGND))
(pad 5 thru_hole rect (at 0 -1.27 90) (size 1.651 1.651) (drill 0.9) (layers *.Cu *.Mask F.SilkS)
(pad 5 thru_hole rect (at 0 -1.27 180) (size 1.651 1.651) (drill 0.9) (layers *.Cu *.Mask F.SilkS)
(net 32 "Net-(D1-Pad2)"))
(pad 6 thru_hole rect (at -2.54 -1.27 90) (size 1.651 1.651) (drill 0.9) (layers *.Cu *.Mask F.SilkS)
(pad 6 thru_hole rect (at -2.54 -1.27 180) (size 1.651 1.651) (drill 0.9) (layers *.Cu *.Mask F.SilkS)
(net 27 DGND))
(model Pin_Headers/Pin_Header_Straight_2x03.wrl
(at (xyz 0 0 0))
1372,7 → 1372,7
)
 
(module Hrebinky:Pin_Header_Straight_1x01 (layer F.Cu) (tedit 5472F1F6) (tstamp 5479AA11)
(at 127 53.848)
(at 58.166 -31.623)
(descr "1 pin")
(tags "CONN DEV")
(path /5479B115)
1396,7 → 1396,7
)
 
(module Hrebinky:Pin_Header_Straight_2x04 placed (layer F.Cu) (tedit 53F5A6CB) (tstamp 5479AA1D)
(at 87.0585 100.965)
(at 54.356 -35.433)
(descr "1 pin")
(tags "CONN DEV")
(path /546DB2C2)
1422,21 → 1422,21
(fp_line (start -5.08 -2.54) (end -5.08 0) (layer F.SilkS) (width 0.254))
(fp_line (start -2.54 -2.54) (end -5.08 -2.54) (layer F.SilkS) (width 0.254))
(pad 3 thru_hole rect (at 1.27 1.27) (size 1.651 1.651) (drill 0.9) (layers *.Cu *.Mask F.SilkS)
(net 44 /BCLK))
(net 43 /BCLK))
(pad 6 thru_hole rect (at 1.27 -1.27) (size 1.651 1.651) (drill 0.9) (layers *.Cu *.Mask F.SilkS)
(net 44 /BCLK))
(net 43 /BCLK))
(pad 1 thru_hole rect (at -3.81 1.27) (size 1.651 1.651) (drill 0.9) (layers *.Cu *.Mask F.SilkS)
(net 45 /LRCLK))
(net 44 /LRCLK))
(pad 2 thru_hole rect (at -1.27 1.27) (size 1.651 1.651) (drill 0.9) (layers *.Cu *.Mask F.SilkS)
(net 46 /DOUT))
(net 45 /DOUT))
(pad 4 thru_hole rect (at 3.81 1.27) (size 1.651 1.651) (drill 0.9) (layers *.Cu *.Mask F.SilkS)
(net 47 /MCLK))
(net 46 /MCLK))
(pad 5 thru_hole rect (at 3.81 -1.27) (size 1.651 1.651) (drill 0.9) (layers *.Cu *.Mask F.SilkS)
(net 47 /MCLK))
(net 46 /MCLK))
(pad 7 thru_hole rect (at -1.27 -1.27) (size 1.651 1.651) (drill 0.9) (layers *.Cu *.Mask F.SilkS)
(net 46 /DOUT))
(net 45 /DOUT))
(pad 8 thru_hole rect (at -3.81 -1.27) (size 1.651 1.651) (drill 0.9) (layers *.Cu *.Mask F.SilkS)
(net 45 /LRCLK))
(net 44 /LRCLK))
(model Pin_Headers/Pin_Header_Straight_2x04.wrl
(at (xyz 0 0 0))
(scale (xyz 1 1 1))
1444,8 → 1444,8
)
)
 
(module Hrebinky:Pin_Header_Straight_2x05 placed (layer F.Cu) (tedit 53F5A718) (tstamp 5479AA2B)
(at 98.044 112.649 90)
(module Hrebinky:Pin_Header_Straight_2x05 placed (layer F.Cu) (tedit 53F5A718) (tstamp 547AFB22)
(at 66.04 -23.368 90)
(descr "1 pin")
(tags "CONN DEV")
(path /546DB2C8)
1509,13 → 1509,13
)
 
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 5479AA31)
(at 260.4135 137.033)
(at 43.815 -11.176 180)
(path /546DB2B9)
(attr smd)
(fp_text reference L1 (at 0 0.3175) (layer B.SilkS)
(fp_text reference L1 (at 0 0.3175 180) (layer B.SilkS)
(effects (font (size 0.50038 0.50038) (thickness 0.10922)) (justify mirror))
)
(fp_text value INDUCTOR_SMALL (at 0.127 -0.381) (layer B.SilkS)
(fp_text value INDUCTOR_SMALL (at 0.127 -0.381 180) (layer B.SilkS)
(effects (font (size 0.50038 0.50038) (thickness 0.10922)) (justify mirror))
)
(fp_circle (center -1.651 -0.762) (end -1.651 -0.635) (layer B.SilkS) (width 0.15))
1525,9 → 1525,9
(fp_line (start 0.508 0.762) (end 1.524 0.762) (layer B.SilkS) (width 0.15))
(fp_line (start 1.524 0.762) (end 1.524 -0.762) (layer B.SilkS) (width 0.15))
(fp_line (start 1.524 -0.762) (end 0.508 -0.762) (layer B.SilkS) (width 0.15))
(pad 1 smd rect (at -0.9525 0) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(pad 1 smd rect (at -0.9525 0 180) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(net 27 DGND))
(pad 2 smd rect (at 0.9525 0) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(pad 2 smd rect (at 0.9525 0 180) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(net 21 GNDA))
(model MLAB_3D/Resistors/chip_cms.wrl
(at (xyz 0 0 0))
1537,7 → 1537,7
)
 
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 5479AA37)
(at 42.1005 120.142 180)
(at 17.272 -8.001 180)
(path /546DB26A)
(attr smd)
(fp_text reference R1 (at 0 0.3175 180) (layer B.SilkS)
1565,7 → 1565,7
)
 
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 5479AA3D)
(at 42.672 112.5855 180)
(at 17.272 -10.287 180)
(path /546DB26B)
(attr smd)
(fp_text reference R2 (at 0 0.3175 180) (layer B.SilkS)
1593,7 → 1593,7
)
 
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 5479AA43)
(at 36.3855 90.6145 180)
(at 17.145 -29.591 180)
(path /546DB285)
(attr smd)
(fp_text reference R3 (at 0 0.3175 180) (layer B.SilkS)
1621,7 → 1621,7
)
 
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 5479AA49)
(at 36.6395 84.709 180)
(at 17.145 -32.258 180)
(path /546DB286)
(attr smd)
(fp_text reference R4 (at 0 0.3175 180) (layer B.SilkS)
1649,13 → 1649,13
)
 
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 5479AA4F)
(at 49.3395 119.38 270)
(at 22.606 -7.366 90)
(path /546DB26D)
(attr smd)
(fp_text reference R5 (at 0 0.3175 270) (layer B.SilkS)
(fp_text reference R5 (at 0 0.3175 90) (layer B.SilkS)
(effects (font (size 0.50038 0.50038) (thickness 0.10922)) (justify mirror))
)
(fp_text value 1k (at 0.127 -0.381 270) (layer B.SilkS)
(fp_text value 1k (at 0.127 -0.381 90) (layer B.SilkS)
(effects (font (size 0.50038 0.50038) (thickness 0.10922)) (justify mirror))
)
(fp_circle (center -1.651 -0.762) (end -1.651 -0.635) (layer B.SilkS) (width 0.15))
1665,9 → 1665,9
(fp_line (start 0.508 0.762) (end 1.524 0.762) (layer B.SilkS) (width 0.15))
(fp_line (start 1.524 0.762) (end 1.524 -0.762) (layer B.SilkS) (width 0.15))
(fp_line (start 1.524 -0.762) (end 0.508 -0.762) (layer B.SilkS) (width 0.15))
(pad 1 smd rect (at -0.9525 0 270) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(pad 1 smd rect (at -0.9525 0 90) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(net 31 /AVDD/2))
(pad 2 smd rect (at 0.9525 0 270) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(pad 2 smd rect (at 0.9525 0 90) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(net 9 "Net-(C5-Pad1)"))
(model MLAB_3D/Resistors/chip_cms.wrl
(at (xyz 0 0 0))
1677,13 → 1677,13
)
 
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 5479AA55)
(at 49.2125 113.538 90)
(at 22.606 -11.176 270)
(path /546DB26E)
(attr smd)
(fp_text reference R6 (at 0 0.3175 90) (layer B.SilkS)
(fp_text reference R6 (at 0 0.3175 270) (layer B.SilkS)
(effects (font (size 0.50038 0.50038) (thickness 0.10922)) (justify mirror))
)
(fp_text value 1k (at 0.127 -0.381 90) (layer B.SilkS)
(fp_text value 1k (at 0.127 -0.381 270) (layer B.SilkS)
(effects (font (size 0.50038 0.50038) (thickness 0.10922)) (justify mirror))
)
(fp_circle (center -1.651 -0.762) (end -1.651 -0.635) (layer B.SilkS) (width 0.15))
1693,9 → 1693,9
(fp_line (start 0.508 0.762) (end 1.524 0.762) (layer B.SilkS) (width 0.15))
(fp_line (start 1.524 0.762) (end 1.524 -0.762) (layer B.SilkS) (width 0.15))
(fp_line (start 1.524 -0.762) (end 0.508 -0.762) (layer B.SilkS) (width 0.15))
(pad 1 smd rect (at -0.9525 0 90) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(pad 1 smd rect (at -0.9525 0 270) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(net 31 /AVDD/2))
(pad 2 smd rect (at 0.9525 0 90) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(pad 2 smd rect (at 0.9525 0 270) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(net 10 "Net-(C5-Pad2)"))
(model MLAB_3D/Resistors/chip_cms.wrl
(at (xyz 0 0 0))
1705,13 → 1705,13
)
 
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 5479AA5B)
(at 43.6245 89.3445 270)
(at 22.606 -29.083 90)
(path /546DB288)
(attr smd)
(fp_text reference R7 (at 0 0.3175 270) (layer B.SilkS)
(fp_text reference R7 (at 0 0.3175 90) (layer B.SilkS)
(effects (font (size 0.50038 0.50038) (thickness 0.10922)) (justify mirror))
)
(fp_text value 1k (at 0.127 -0.381 270) (layer B.SilkS)
(fp_text value 1k (at 0.127 -0.381 90) (layer B.SilkS)
(effects (font (size 0.50038 0.50038) (thickness 0.10922)) (justify mirror))
)
(fp_circle (center -1.651 -0.762) (end -1.651 -0.635) (layer B.SilkS) (width 0.15))
1721,9 → 1721,9
(fp_line (start 0.508 0.762) (end 1.524 0.762) (layer B.SilkS) (width 0.15))
(fp_line (start 1.524 0.762) (end 1.524 -0.762) (layer B.SilkS) (width 0.15))
(fp_line (start 1.524 -0.762) (end 0.508 -0.762) (layer B.SilkS) (width 0.15))
(pad 1 smd rect (at -0.9525 0 270) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(pad 1 smd rect (at -0.9525 0 90) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(net 31 /AVDD/2))
(pad 2 smd rect (at 0.9525 0 270) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(pad 2 smd rect (at 0.9525 0 90) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(net 11 "Net-(C6-Pad1)"))
(model MLAB_3D/Resistors/chip_cms.wrl
(at (xyz 0 0 0))
1733,13 → 1733,13
)
 
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 5479AA61)
(at 43.561 85.217 90)
(at 22.606 -32.893 270)
(path /546DB289)
(attr smd)
(fp_text reference R8 (at 0 0.3175 90) (layer B.SilkS)
(fp_text reference R8 (at 0 0.3175 270) (layer B.SilkS)
(effects (font (size 0.50038 0.50038) (thickness 0.10922)) (justify mirror))
)
(fp_text value 1k (at 0.127 -0.381 90) (layer B.SilkS)
(fp_text value 1k (at 0.127 -0.381 270) (layer B.SilkS)
(effects (font (size 0.50038 0.50038) (thickness 0.10922)) (justify mirror))
)
(fp_circle (center -1.651 -0.762) (end -1.651 -0.635) (layer B.SilkS) (width 0.15))
1749,9 → 1749,9
(fp_line (start 0.508 0.762) (end 1.524 0.762) (layer B.SilkS) (width 0.15))
(fp_line (start 1.524 0.762) (end 1.524 -0.762) (layer B.SilkS) (width 0.15))
(fp_line (start 1.524 -0.762) (end 0.508 -0.762) (layer B.SilkS) (width 0.15))
(pad 1 smd rect (at -0.9525 0 90) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(pad 1 smd rect (at -0.9525 0 270) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(net 31 /AVDD/2))
(pad 2 smd rect (at 0.9525 0 90) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(pad 2 smd rect (at 0.9525 0 270) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(net 12 "Net-(C6-Pad2)"))
(model MLAB_3D/Resistors/chip_cms.wrl
(at (xyz 0 0 0))
1761,7 → 1761,7
)
 
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 5479AA67)
(at 51.689 116.3955 90)
(at 30.734 -8.763 90)
(path /546DB26F)
(attr smd)
(fp_text reference R9 (at 0 0.3175 90) (layer B.SilkS)
1788,8 → 1788,8
)
)
 
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 5479AA6D)
(at 46.228 87.0585 90)
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 547AF066)
(at 30.734 -30.226 90)
(path /546DB28A)
(attr smd)
(fp_text reference R10 (at 0 0.3175 90) (layer B.SilkS)
1817,7 → 1817,7
)
 
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 5479AA73)
(at 57.0865 122.047 180)
(at 28.067 -4.318 180)
(path /546DB270)
(attr smd)
(fp_text reference R11 (at 0 0.3175 180) (layer B.SilkS)
1845,7 → 1845,7
)
 
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 5479AA79)
(at 55.8165 111.4425 180)
(at 26.797 -14.224 180)
(path /546DB271)
(attr smd)
(fp_text reference R12 (at 0 0.3175 180) (layer B.SilkS)
1872,8 → 1872,8
)
)
 
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 5479E823) (tstamp 5479AA7F)
(at 50.292 92.1385 180)
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 5479E823) (tstamp 547AEFC9)
(at 28.067 -25.654 180)
(path /546DB28B)
(attr smd)
(fp_text reference R13 (at 0.127 0.381 180) (layer B.SilkS)
1901,7 → 1901,7
)
 
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 5479AA85)
(at 50.165 81.153 180)
(at 27.305 -36.068 180)
(path /546DB28C)
(attr smd)
(fp_text reference R14 (at 0 0.3175 180) (layer B.SilkS)
1929,7 → 1929,7
)
 
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 5479AA8B)
(at 63.1825 113.6015 180)
(at 33.782 -7.874 180)
(path /546DB274)
(attr smd)
(fp_text reference R15 (at 0 0.3175 180) (layer B.SilkS)
1957,7 → 1957,7
)
 
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 5479AA91)
(at 63.5 121.031 180)
(at 33.782 -10.033 180)
(path /546DB275)
(attr smd)
(fp_text reference R16 (at 0 0.3175 180) (layer B.SilkS)
1984,8 → 1984,8
)
)
 
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 5479AA97)
(at 54.8005 91.567 180)
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 547AF173)
(at 33.909 -29.464 180)
(path /546DB28F)
(attr smd)
(fp_text reference R17 (at 0 0.3175 180) (layer B.SilkS)
2012,8 → 2012,8
)
)
 
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 5479AA9D)
(at 59.055 84.1375 180)
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 547AF124)
(at 33.909 -31.496 180)
(path /546DB290)
(attr smd)
(fp_text reference R18 (at 0 0.3175 180) (layer B.SilkS)
2041,7 → 2041,7
)
 
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 5479AAA3)
(at 93.853 107.569)
(at 63.754 -31.115)
(path /546DB2C7)
(attr smd)
(fp_text reference R19 (at 0 0.3175) (layer B.SilkS)
2068,8 → 2068,8
)
)
 
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 5479AAA9)
(at 93.853 110.0455)
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 547AFC13)
(at 61.595 -24.257)
(path /546DB2C3)
(attr smd)
(fp_text reference R20 (at 0 0.3175) (layer B.SilkS)
2096,8 → 2096,8
)
)
 
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 5479AAAF)
(at 93.6625 112.7125)
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 547AF92F)
(at 61.595 -22.225)
(path /546DB2C4)
(attr smd)
(fp_text reference R21 (at 0 0.3175) (layer B.SilkS)
2125,7 → 2125,7
)
 
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 5479AAB5)
(at 93.5355 115.062)
(at 61.595 -19.431)
(path /546DB2C5)
(attr smd)
(fp_text reference R22 (at 0 0.3175) (layer B.SilkS)
2152,8 → 2152,8
)
)
 
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 5479AABB)
(at 93.6625 117.6655)
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 547AF8B3)
(at 61.595 -17.653)
(path /546DB2C6)
(attr smd)
(fp_text reference R23 (at 0 0.3175) (layer B.SilkS)
2181,13 → 2181,13
)
 
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 5479AAC1)
(at 37.973 102.8065)
(at 22.987 -21.844 180)
(path /546DB29E)
(attr smd)
(fp_text reference R24 (at 0 0.3175) (layer B.SilkS)
(fp_text reference R24 (at 0 0.3175 180) (layer B.SilkS)
(effects (font (size 0.50038 0.50038) (thickness 0.10922)) (justify mirror))
)
(fp_text value 1k (at 0.127 -0.381) (layer B.SilkS)
(fp_text value 1k (at 0.127 -0.381 180) (layer B.SilkS)
(effects (font (size 0.50038 0.50038) (thickness 0.10922)) (justify mirror))
)
(fp_circle (center -1.651 -0.762) (end -1.651 -0.635) (layer B.SilkS) (width 0.15))
2197,9 → 2197,9
(fp_line (start 0.508 0.762) (end 1.524 0.762) (layer B.SilkS) (width 0.15))
(fp_line (start 1.524 0.762) (end 1.524 -0.762) (layer B.SilkS) (width 0.15))
(fp_line (start 1.524 -0.762) (end 0.508 -0.762) (layer B.SilkS) (width 0.15))
(pad 1 smd rect (at -0.9525 0) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(pad 1 smd rect (at -0.9525 0 180) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(net 22 +5V))
(pad 2 smd rect (at 0.9525 0) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(pad 2 smd rect (at 0.9525 0 180) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(net 31 /AVDD/2))
(model MLAB_3D/Resistors/chip_cms.wrl
(at (xyz 0 0 0))
2208,14 → 2208,14
)
)
 
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 5479AAC7)
(at 43.1165 102.743)
(module MLAB_R:SMD-0805 (layer B.Cu) (tedit 54799E0C) (tstamp 547AF67B)
(at 19.558 -21.844 180)
(path /546DB29F)
(attr smd)
(fp_text reference R25 (at 0 0.3175) (layer B.SilkS)
(fp_text reference R25 (at 0 0.3175 180) (layer B.SilkS)
(effects (font (size 0.50038 0.50038) (thickness 0.10922)) (justify mirror))
)
(fp_text value 1k (at 0.127 -0.381) (layer B.SilkS)
(fp_text value 1k (at 0.127 -0.381 180) (layer B.SilkS)
(effects (font (size 0.50038 0.50038) (thickness 0.10922)) (justify mirror))
)
(fp_circle (center -1.651 -0.762) (end -1.651 -0.635) (layer B.SilkS) (width 0.15))
2225,9 → 2225,9
(fp_line (start 0.508 0.762) (end 1.524 0.762) (layer B.SilkS) (width 0.15))
(fp_line (start 1.524 0.762) (end 1.524 -0.762) (layer B.SilkS) (width 0.15))
(fp_line (start 1.524 -0.762) (end 0.508 -0.762) (layer B.SilkS) (width 0.15))
(pad 1 smd rect (at -0.9525 0) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(pad 1 smd rect (at -0.9525 0 180) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(net 31 /AVDD/2))
(pad 2 smd rect (at 0.9525 0) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(pad 2 smd rect (at 0.9525 0 180) (size 0.889 1.397) (layers B.Cu B.Paste B.Mask)
(net 21 GNDA))
(model MLAB_3D/Resistors/chip_cms.wrl
(at (xyz 0 0 0))
2237,7 → 2237,7
)
 
(module MLAB_IO:SO-8 (layer B.Cu) (tedit 5479A0C5) (tstamp 5479AAD9)
(at 55.88 116.586 180)
(at 26.797 -9.144 180)
(descr "SO-8 Surface Mount Small Outline 150mil 8pin Package")
(tags "Power Integrations D Package")
(path /546DB277)
2276,8 → 2276,8
)
)
 
(module MLAB_IO:SO-8 (layer B.Cu) (tedit 5479A0C5) (tstamp 5479AAEB)
(at 50.292 86.995 180)
(module MLAB_IO:SO-8 (layer B.Cu) (tedit 5479A0C5) (tstamp 547AF058)
(at 26.924 -30.861 180)
(descr "SO-8 Surface Mount Small Outline 150mil 8pin Package")
(tags "Power Integrations D Package")
(path /546DB292)
2316,8 → 2316,8
)
)
 
(module MLAB_IO:SO-8 (layer B.Cu) (tedit 5479A0C5) (tstamp 5479AB15)
(at 239.014 135.636)
(module MLAB_IO:SO-8 (layer B.Cu) (tedit 5479A0C5) (tstamp 547AFC6F)
(at 49.149 -11.938)
(descr "SO-8 Surface Mount Small Outline 150mil 8pin Package")
(tags "Power Integrations D Package")
(path /546DB2AC)
2336,15 → 2336,15
(pad 1 smd oval (at -1.905 -2.794) (size 0.6096 1.4732) (layers B.Cu B.Paste B.Mask)
(net 28 +3.3V))
(pad 2 smd oval (at -0.635 -2.794) (size 0.6096 1.4732) (layers B.Cu B.Paste B.Mask)
(net 39 "Net-(U4-Pad2)"))
(net 27 DGND))
(pad 3 smd oval (at 0.635 -2.794) (size 0.6096 1.4732) (layers B.Cu B.Paste B.Mask)
(net 39 "Net-(U4-Pad2)"))
(net 27 DGND))
(pad 4 smd oval (at 1.905 -2.794) (size 0.6096 1.4732) (layers B.Cu B.Paste B.Mask)
(net 39 "Net-(U4-Pad2)"))
(net 47 "Net-(U4-Pad4)"))
(pad 5 smd oval (at 1.905 2.794) (size 0.6096 1.4732) (layers B.Cu B.Paste B.Mask)
(net 39 "Net-(U4-Pad2)"))
(net 27 DGND))
(pad 6 smd oval (at 0.635 2.794) (size 0.6096 1.4732) (layers B.Cu B.Paste B.Mask)
(net 39 "Net-(U4-Pad2)"))
(net 27 DGND))
(pad 7 smd oval (at -0.635 2.794) (size 0.6096 1.4732) (layers B.Cu B.Paste B.Mask)
(net 27 DGND))
(pad 8 smd oval (at -1.905 2.794) (size 0.6096 1.4732) (layers B.Cu B.Paste B.Mask)
2357,12 → 2357,12
)
 
(module MLAB_L:FIR1 (layer B.Cu) (tedit 5479A7B4) (tstamp 5479B1A1)
(at 218.186 133.5405)
(at 54.356 -10.16 180)
(path /546DB2A6)
(fp_text reference F1 (at 0 0) (layer B.SilkS)
(fp_text reference F1 (at 0 0 180) (layer B.SilkS)
(effects (font (size 1 1) (thickness 0.15)) (justify mirror))
)
(fp_text value NFM21PC105 (at 0 0) (layer B.SilkS)
(fp_text value NFM21PC105 (at 0 0 180) (layer B.SilkS)
(effects (font (size 1 1) (thickness 0.15)) (justify mirror))
)
(fp_line (start -2.032 0.762) (end 2.032 0.762) (layer B.SilkS) (width 0.15))
2370,11 → 2370,11
(fp_line (start 2.032 -0.762) (end -2.032 -0.762) (layer B.SilkS) (width 0.15))
(fp_line (start -2.032 -0.762) (end -2.032 0.762) (layer B.SilkS) (width 0.15))
(fp_line (start -2.032 0.762) (end -2.032 0.635) (layer B.SilkS) (width 0.15))
(pad 1 smd rect (at -1.35 0) (size 1.3 1.5) (layers B.Cu B.Paste B.Mask)
(pad 1 smd rect (at -1.35 0 180) (size 1.3 1.5) (layers B.Cu B.Paste B.Mask)
(net 32 "Net-(D1-Pad2)"))
(pad 2 smd rect (at 0 0) (size 0.7 3) (layers B.Cu B.Paste B.Mask)
(pad 2 smd rect (at 0 0 180) (size 0.7 3) (layers B.Cu B.Paste B.Mask)
(net 27 DGND))
(pad 3 smd rect (at 1.35 0) (size 1.3 1.5) (layers B.Cu B.Paste B.Mask)
(pad 3 smd rect (at 1.35 0 180) (size 1.3 1.5) (layers B.Cu B.Paste B.Mask)
(net 22 +5V))
(model MLAB_3D/Resistors/chip_cms.wrl
(at (xyz 0 0 0))
2396,7 → 2396,7
)
(fp_circle (center 0 0) (end 2.99974 0) (layer Cmts.User) (width 0.381))
(pad 1 thru_hole circle (at 0 0) (size 6 6) (drill 3) (layers *.Cu *.Adhes *.Mask)
(net 40 "Net-(P1-Pad1)") (clearance 1) (zone_connect 2))
(net 39 "Net-(P1-Pad1)") (clearance 1) (zone_connect 2))
)
 
(module Dira:MountingHole_3mm placed (layer F.Cu) (tedit 54345FDC) (tstamp 5479B1AB)
2412,7 → 2412,7
)
(fp_circle (center 0 0) (end 2.99974 0) (layer Cmts.User) (width 0.381))
(pad 1 thru_hole circle (at 0 0) (size 6 6) (drill 3) (layers *.Cu *.Adhes *.Mask)
(net 41 "Net-(P2-Pad1)") (clearance 1) (zone_connect 2))
(net 40 "Net-(P2-Pad1)") (clearance 1) (zone_connect 2))
)
 
(module Dira:MountingHole_3mm placed (layer F.Cu) (tedit 54345FDC) (tstamp 5479B1B0)
2428,7 → 2428,7
)
(fp_circle (center 0 0) (end 2.99974 0) (layer Cmts.User) (width 0.381))
(pad 1 thru_hole circle (at 0 0) (size 6 6) (drill 3) (layers *.Cu *.Adhes *.Mask)
(net 42 "Net-(P3-Pad1)") (clearance 1) (zone_connect 2))
(net 41 "Net-(P3-Pad1)") (clearance 1) (zone_connect 2))
)
 
(module Dira:MountingHole_3mm placed (layer F.Cu) (tedit 54345FDC) (tstamp 5479B1B5)
2444,11 → 2444,11
)
(fp_circle (center 0 0) (end 2.99974 0) (layer Cmts.User) (width 0.381))
(pad 1 thru_hole circle (at 0 0) (size 6 6) (drill 3) (layers *.Cu *.Adhes *.Mask)
(net 43 "Net-(P4-Pad1)") (clearance 1) (zone_connect 2))
(net 42 "Net-(P4-Pad1)") (clearance 1) (zone_connect 2))
)
 
(module MLAB_IO:SSOP-20_5.3x7.2mm_Pitch0.65mm (layer B.Cu) (tedit 5479A615) (tstamp 5479B1B6)
(at 82.804 110.5535 270)
(at 51.1175 -24.892 270)
(descr "20-Lead Plastic Shrink Small Outline (SS)-5.30 mm Body [SSOP] (see Microchip Packaging Specification 00000049BS.pdf)")
(tags "SSOP 0.65")
(path /54771FA7)
2477,17 → 2477,17
(pad 3 smd rect (at -3.6 1.625 270) (size 1.75 0.45) (layers B.Cu B.Paste B.Mask)
(net 21 GNDA))
(pad 4 smd rect (at -3.6 0.975 270) (size 1.75 0.45) (layers B.Cu B.Paste B.Mask)
(net 28 +3.3V))
(net 22 +5V))
(pad 5 smd rect (at -3.6 0.325 270) (size 1.75 0.45) (layers B.Cu B.Paste B.Mask)
(net 21 GNDA))
(pad 6 smd rect (at -3.6 -0.325 270) (size 1.75 0.45) (layers B.Cu B.Paste B.Mask)
(net 45 /LRCLK))
(net 44 /LRCLK))
(pad 7 smd rect (at -3.6 -0.975 270) (size 1.75 0.45) (layers B.Cu B.Paste B.Mask)
(net 46 /DOUT))
(net 45 /DOUT))
(pad 8 smd rect (at -3.6 -1.625 270) (size 1.75 0.45) (layers B.Cu B.Paste B.Mask)
(net 44 /BCLK))
(net 43 /BCLK))
(pad 9 smd rect (at -3.6 -2.275 270) (size 1.75 0.45) (layers B.Cu B.Paste B.Mask)
(net 47 /MCLK))
(net 46 /MCLK))
(pad 10 smd rect (at -3.6 -2.925 270) (size 1.75 0.45) (layers B.Cu B.Paste B.Mask)
(net 34 /MSO))
(pad 11 smd rect (at 3.6 -2.925 270) (size 1.75 0.45) (layers B.Cu B.Paste B.Mask)
2518,12 → 2518,12
)
 
(module MLAB_XTAL:ASFL1 (layer B.Cu) (tedit 5479A9ED) (tstamp 5479B207)
(at 119.507 56.515)
(at 59.309 -28.194 180)
(path /547988D5)
(fp_text reference X1 (at 0 0) (layer B.SilkS)
(fp_text reference X1 (at 0 0 180) (layer B.SilkS)
(effects (font (size 1 1) (thickness 0.15)) (justify mirror))
)
(fp_text value ASFL1-24.576MHZ-EK (at 0 0) (layer B.SilkS)
(fp_text value ASFL1-24.576MHZ-EK (at 0 0 180) (layer B.SilkS)
(effects (font (size 1 1) (thickness 0.15)) (justify mirror))
)
(fp_line (start -2.5 1.6) (end 2.5 1.6) (layer B.SilkS) (width 0.15))
2530,12 → 2530,12
(fp_line (start 2.5 1.6) (end 2.5 -1.6) (layer B.SilkS) (width 0.15))
(fp_line (start 2.5 -1.6) (end -2.5 -1.6) (layer B.SilkS) (width 0.15))
(fp_line (start -2.5 -1.6) (end -2.5 1.6) (layer B.SilkS) (width 0.15))
(pad 1 smd rect (at -1.27 -1.1) (size 1.7 1.5) (layers B.Cu B.Paste B.Mask))
(pad 2 smd rect (at 1.27 -1.1) (size 1.7 1.5) (layers B.Cu B.Paste B.Mask)
(pad 1 smd rect (at -1.27 -1.1 180) (size 1.7 1.5) (layers B.Cu B.Paste B.Mask))
(pad 2 smd rect (at 1.27 -1.1 180) (size 1.7 1.5) (layers B.Cu B.Paste B.Mask)
(net 27 DGND))
(pad 3 smd rect (at 1.27 1.1) (size 1.7 1.5) (layers B.Cu B.Paste B.Mask)
(pad 3 smd rect (at 1.27 1.1 180) (size 1.7 1.5) (layers B.Cu B.Paste B.Mask)
(net 33 "Net-(J4-Pad1)"))
(pad 4 smd rect (at -1.27 1.1) (size 1.7 1.5) (layers B.Cu B.Paste B.Mask)
(pad 4 smd rect (at -1.27 1.1 180) (size 1.7 1.5) (layers B.Cu B.Paste B.Mask)
(net 28 +3.3V))
)
 
2544,4 → 2544,418
(gr_line (start 70.864 -0.256) (end 70.864 -40.384) (angle 90) (layer Edge.Cuts) (width 0.1))
(gr_line (start 0.256 -40.384) (end 70.864 -40.384) (angle 90) (layer Edge.Cuts) (width 0.1))
 
(segment (start 6.223 -13.208) (end 7.4485 -13.208) (width 0.4) (layer B.Cu) (net 1))
(segment (start 7.4485 -13.208) (end 9.340239 -11.316261) (width 0.4) (layer B.Cu) (net 1))
(segment (start 9.340239 -11.316261) (end 9.340239 -8.688681) (width 0.4) (layer B.Cu) (net 1))
(segment (start 9.340239 -8.688681) (end 10.7696 -7.25932) (width 0.4) (layer B.Cu) (net 1))
(segment (start 10.7696 -7.25932) (end 10.7696 -6.985) (width 0.4) (layer B.Cu) (net 1))
(segment (start 3.683 -13.208) (end 6.223 -13.208) (width 0.4) (layer B.Cu) (net 1))
(segment (start 16.3195 -8.001) (end 14.8844 -8.001) (width 0.4) (layer B.Cu) (net 2))
(segment (start 14.8844 -8.001) (end 13.8684 -6.985) (width 0.4) (layer B.Cu) (net 2))
(segment (start 16.3195 -10.287) (end 14.8844 -10.287) (width 0.4) (layer B.Cu) (net 3))
(segment (start 14.8844 -10.287) (end 13.8684 -11.303) (width 0.4) (layer B.Cu) (net 3))
(segment (start 10.7696 -11.303) (end 10.7696 -12.4269) (width 0.4) (layer B.Cu) (net 4))
(segment (start 10.7696 -12.4269) (end 7.4485 -15.748) (width 0.4) (layer B.Cu) (net 4))
(segment (start 7.4485 -15.748) (end 4.9085 -15.748) (width 0.4) (layer B.Cu) (net 4))
(segment (start 4.9085 -15.748) (end 3.683 -15.748) (width 0.4) (layer B.Cu) (net 4))
(segment (start 3.683 -15.748) (end 6.223 -15.748) (width 0.4) (layer B.Cu) (net 4))
(segment (start 16.1925 -29.591) (end 14.7574 -29.591) (width 0.4) (layer B.Cu) (net 5))
(segment (start 14.7574 -29.591) (end 13.9954 -28.829) (width 0.4) (layer B.Cu) (net 5))
(segment (start 6.223 -24.64308) (end 6.223 -24.511) (width 0.4) (layer B.Cu) (net 6))
(segment (start 10.8966 -28.829) (end 10.8966 -28.55468) (width 0.4) (layer B.Cu) (net 6))
(segment (start 10.8966 -28.55468) (end 6.223 -23.88108) (width 0.4) (layer B.Cu) (net 6))
(segment (start 3.683 -24.511) (end 6.223 -24.511) (width 0.4) (layer B.Cu) (net 6))
(segment (start 16.1925 -32.258) (end 14.8844 -32.258) (width 0.4) (layer B.Cu) (net 7))
(segment (start 14.8844 -32.258) (end 13.9954 -33.147) (width 0.4) (layer B.Cu) (net 7))
(segment (start 3.683 -27.051) (end 6.151202 -27.051) (width 0.4) (layer B.Cu) (net 8))
(segment (start 6.151202 -26.289) (end 9.467239 -29.605037) (width 0.4) (layer B.Cu) (net 8))
(segment (start 9.467239 -29.605037) (end 9.467239 -31.443319) (width 0.4) (layer B.Cu) (net 8))
(segment (start 9.467239 -31.443319) (end 10.8966 -32.87268) (width 0.4) (layer B.Cu) (net 8))
(segment (start 10.8966 -32.87268) (end 10.8966 -33.147) (width 0.4) (layer B.Cu) (net 8))
(segment (start 3.683 -27.051) (end 6.223 -27.051) (width 0.4) (layer B.Cu) (net 8))
(segment (start 26.162 -6.35) (end 26.162 -6.7818) (width 0.4) (layer B.Cu) (net 9))
(segment (start 26.162 -6.7818) (end 24.6253 -8.3185) (width 0.4) (layer B.Cu) (net 9))
(segment (start 24.6253 -8.3185) (end 23.7045 -8.3185) (width 0.4) (layer B.Cu) (net 9))
(segment (start 23.7045 -8.3185) (end 22.606 -8.3185) (width 0.4) (layer B.Cu) (net 9))
(segment (start 20.32 -8.3185) (end 22.606 -8.3185) (width 0.4) (layer B.Cu) (net 9))
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