<?xml version="1.0" encoding="utf-8"?>
<!DOCTYPE eagle SYSTEM "eagle.dtd">
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<library>
<description>&lt;b&gt;Field Effect Transistors&lt;/b&gt;&lt;p&gt;
&lt;author&gt;Created by librarian@cadsoft.de&lt;/author&gt;&lt;p&gt;
&lt;p&gt;
Symbols changed according to IEC617&lt;p&gt; 
All types, packages and assignment to symbols and pins checked&lt;p&gt;
Package outlines partly checked&lt;p&gt;
&lt;p&gt;
JFET = junction FET&lt;p&gt;
IGBT-x = insulated gate bipolar transistor&lt;p&gt;
x=N: NPN; x=P: PNP&lt;p&gt;
IGFET-mc-nnn; (IGFET=insulated gate field effect transistor)&lt;P&gt;
m=D: depletion mode (Verdr&amp;auml;ngungstyp)&lt;p&gt;
m=E: enhancement mode (Anreicherungstyp)&lt;p&gt;
c: N=N-channel; P=P-Channel&lt;p&gt;
nnn=GDS:  gate, drain, source&lt;p&gt;
2GDS: 2 x gate, drain, source&lt;p&gt;
GnDS: gate, n x drain, source&lt;p&gt;
GDSB: gate, drain, source, bulk&lt;p&gt;
&lt;p&gt;
by R. Vogg  15.March.2002</description>
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<deviceset name="BUZ10" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 50V; 20A; 0,080Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ11" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 50V; 30A; 0,040Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ20" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 100V; 12A; 0,2Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ23" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 100V; 10A; 0,2Ohm</description>
<gates>
<gate name="A" symbol="IGFET-EN-G2DS" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO3">
<connects>
<connect gate="A" pin="D" pad="3"/>
<connect gate="A" pin="D1" pad="4"/>
<connect gate="A" pin="G" pad="2"/>
<connect gate="A" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ24" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 100V; 32A; 0,060Ohm</description>
<gates>
<gate name="A" symbol="IGFET-EN-G2DS" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO3">
<connects>
<connect gate="A" pin="D" pad="3"/>
<connect gate="A" pin="D1" pad="4"/>
<connect gate="A" pin="G" pad="2"/>
<connect gate="A" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ36" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 200V; 22A; 0,12Ohm</description>
<gates>
<gate name="A" symbol="IGFET-EN-G2DS" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO3">
<connects>
<connect gate="A" pin="D" pad="3"/>
<connect gate="A" pin="D1" pad="4"/>
<connect gate="A" pin="G" pad="2"/>
<connect gate="A" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ71" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 50V; 14A; 0,1Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ72" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 100V; 10A; 0,2Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ22" prefix="T">
<description>&lt;b&gt;N-Channel MOSFET&lt;/b&gt; not checked</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ64" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 400V; 11,5A; 0,40Ohm</description>
<gates>
<gate name="A" symbol="IGFET-EN-G2DS" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO3">
<connects>
<connect gate="A" pin="D" pad="3"/>
<connect gate="A" pin="D1" pad="4"/>
<connect gate="A" pin="G" pad="2"/>
<connect gate="A" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ325" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 400V; 10,5A; 0,5Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TOP3">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ347" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 50V; 40A; 0,030Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TOP3">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ382" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 400V; 12,5A; 0,4Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TOP3">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ172" prefix="Q">
<description>&lt;b&gt;P-Channel Enhancement MOSFET&lt;/b&gt; -100V; -5A; 0,8Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EP-GDS" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ171" prefix="Q">
<description>&lt;b&gt;P-Channel Enhancement MOSFET&lt;/b&gt; -50V; 7A; 0,4Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EP-GDS" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ21" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 100V; 19A; 0,1Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ45" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 500V; 9,5A; 0,6Ohm</description>
<gates>
<gate name="A" symbol="IGFET-EN-G2DS" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO3">
<connects>
<connect gate="A" pin="D" pad="3"/>
<connect gate="A" pin="D1" pad="4"/>
<connect gate="A" pin="G" pad="2"/>
<connect gate="A" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ60" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 400V; 5,5A; 1,0Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ50A" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 1000V; 2,5A; 5,0Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BUZ230" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 1000V; 5,5A; 2,0Ohm</description>
<gates>
<gate name="A" symbol="IGFET-EN-G2DS" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO3">
<connects>
<connect gate="A" pin="D" pad="3"/>
<connect gate="A" pin="D1" pad="4"/>
<connect gate="A" pin="G" pad="2"/>
<connect gate="A" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BSS101" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 200V; 0,16A; 11Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO92">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BSS92" prefix="Q">
<description>&lt;b&gt;P-Channel Enhancement MOSFET&lt;/b&gt; -200V; -0,15A; 11Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EP-GDS" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO92">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BSS295" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; not checked</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO92">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BSS296" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; not checked</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO92">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BSS97" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 200V; 1.5A; 1,6Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO202">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BSS110" prefix="Q">
<description>&lt;b&gt;P-Channel Enhancement MOSFET&lt;/b&gt; -50V; -0,17A; 6Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EP-GDS" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO92">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="IRF540" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; (HEXFET); 100V; 28A; 0,077Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="IRF510" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; (HEXFET); 100V; 5,6A; 0,54Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="IRF620" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; (HEXFET); 200V; 5,2A; 0,8Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="IRF840" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; (HEXFET); 500V; 8A; 0,85Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="IRF330" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 400V; 5,9A; 1,0Ohm (=BUZ63)</description>
<gates>
<gate name="A" symbol="IGFET-EN-G2DS" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO3">
<connects>
<connect gate="A" pin="D" pad="3"/>
<connect gate="A" pin="D1" pad="4"/>
<connect gate="A" pin="G" pad="2"/>
<connect gate="A" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="IRF350" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt;&lt;p&gt;
(HEXFET); 400V; 0.3 Ohm; 14A</description>
<gates>
<gate name="A" symbol="IGFET-EN-G2DS" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO3">
<connects>
<connect gate="A" pin="D" pad="3"/>
<connect gate="A" pin="D1" pad="4"/>
<connect gate="A" pin="G" pad="2"/>
<connect gate="A" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="2N3819" prefix="Q">
<description>&lt;b&gt;N-Channel Junction FET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="JFET-N" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO92">
<connects>
<connect gate="G$1" pin="D" pad="1"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="2N3820" prefix="Q">
<description>&lt;b&gt;P-Channel Junction FET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="JFET-P" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO92">
<connects>
<connect gate="G$1" pin="D" pad="1"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="2N5116" prefix="Q">
<description>&lt;b&gt;P-Channel Junction FET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="JFET-P" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO18">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BF247" prefix="Q">
<description>&lt;b&gt;N-Channel Junction FET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="JFET-N" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO92">
<connects>
<connect gate="G$1" pin="D" pad="1"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BF256" prefix="Q">
<description>&lt;b&gt;N-Channel Junction FET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="JFET-N" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO92">
<connects>
<connect gate="G$1" pin="D" pad="1"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BF245" prefix="Q">
<description>&lt;b&gt;N-Channel Junction FET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="JFET-N" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO92">
<connects>
<connect gate="G$1" pin="D" pad="1"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BFT10" prefix="Q">
<description>&lt;b&gt;N-Channel Junction FET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="JFET-N" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO92">
<connects>
<connect gate="G$1" pin="D" pad="1"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="BFT11" prefix="T">
<description>&lt;b&gt;P-Channel Junction FET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="JFET-P" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO92">
<connects>
<connect gate="G$1" pin="D" pad="1"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="2N4221" prefix="Q">
<description>&lt;b&gt;N-Channel Junction FET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="JFET-N" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO72">
<connects>
<connect gate="G$1" pin="D" pad="1"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="2N4392" prefix="T">
<description>&lt;b&gt;N-Channel Junction FET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="JFET-N" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO18">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="2N4857" prefix="Q">
<description>&lt;b&gt;N-Channel Junction FET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="JFET-N" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO18">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="IRFD9210" prefix="Q">
<description>&lt;b&gt;P-Channel Enhancement MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="IGFET-EP-G2DS" x="0" y="0"/>
</gates>
<devices>
<device name="" package="DIL04">
<connects>
<connect gate="G$1" pin="D" pad="4"/>
<connect gate="G$1" pin="D1" pad="3"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="2"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="SD211" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDSB" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO72">
<connects>
<connect gate="G$1" pin="B" pad="4"/>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="SD215" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDSB" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO72">
<connects>
<connect gate="G$1" pin="B" pad="4"/>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="VN66AF" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 60V; 2A; 3,0Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS" x="-2.54" y="0"/>
</gates>
<devices>
<device name="" package="TO202">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="VN88AF" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 80V; 2A; 3,0Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO202">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="LP0701N3" prefix="Q">
<description>&lt;b&gt;P-Channel Enhancement MOSFET&lt;/b&gt; -16,5V; -1,25A; 1,5Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EP-GDS" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO-92">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="TN0604N3" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 40V; 4A; 0,75Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO-92">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="TP0602N3" prefix="Q">
<description>&lt;b&gt;P-Channel Enhancement MOSFET&lt;/b&gt; -20V; -2A; 2,0Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EP-GDS" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO-92">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="TP0604N3" prefix="Q">
<description>&lt;b&gt;P-Channel Enhancement MOSFET&lt;/b&gt; -40V; -2A; 2,0Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EP-GDS" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO-92">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="TP0602N2" prefix="Q">
<description>&lt;b&gt;P-Channel Enhancement MOSFET&lt;/b&gt; -20V; -2A; 2,0Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EP-GDS" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO-39">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="TP0604N2" prefix="Q">
<description>&lt;b&gt;P-Channel Enhancement MOSFET&lt;/b&gt; -40V; -2A; 2,0Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EP-GDS" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO-39">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="TN0602N2" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 20V; 4A; 0,85Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO-39">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="TN0602N3" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 20V; 4A; 0,75Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO-92">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="VN0106N9" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 60V; 0,5A; 3,0Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS" x="0" y="-2.54"/>
</gates>
<devices>
<device name="" package="TO-52">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="2N4093">
<description>&lt;b&gt;N-Channel Junction FET&lt;/b&gt;</description>
<gates>
<gate name="G$1" symbol="JFET-N" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO18">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="3"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="IRF9530">
<description>&lt;b&gt;P-Channel Enhancement MOSFET&lt;/b&gt; (HEXFET); -100V; -12A; 0,3Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EP-GDS" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="VN10KM">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/B&gt; (VMOS); 60V; 0,5A; 5,0Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO237">
<connects>
<connect gate="G$1" pin="D" pad="1"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="VN2222KM">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; (VMOS); 60V; 0,5A; 7,5Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO237">
<connects>
<connect gate="G$1" pin="D" pad="1"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="TN0604N2">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/B&gt; 40V; 4A; 0,85Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO-39">
<connects>
<connect gate="G$1" pin="D" pad="3"/>
<connect gate="G$1" pin="G" pad="2"/>
<connect gate="G$1" pin="S" pad="1"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="SUP75N06-08" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; 60V; 75A; 0,008Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EN-GDS" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="SUP65P06-20" prefix="Q">
<description>&lt;b&gt;P-Channel Enhancement MOSFET&lt;/b&gt; -60V; 60A; 0,020Ohm</description>
<gates>
<gate name="G$1" symbol="IGFET-EP-GDS" x="0" y="0"/>
</gates>
<devices>
<device name="" package="TO220">
<connects>
<connect gate="G$1" pin="D" pad="2"/>
<connect gate="G$1" pin="G" pad="1"/>
<connect gate="G$1" pin="S" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="POWER-FET-SMD">
<gates>
<gate name="G$1" symbol="POWER-FET-SMD" x="0" y="0"/>
</gates>
<devices>
<device name="" package="POWER-FET-SMD">
<connects>
<connect gate="G$1" pin="D" pad="2/D"/>
<connect gate="G$1" pin="D1" pad="4/D"/>
<connect gate="G$1" pin="G" pad="1/G"/>
<connect gate="G$1" pin="S" pad="3/S"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="N-CHANNEL-SI9410DY">
<gates>
<gate name="G$1" symbol="N-CANNEL-SI9410DY" x="-7.62" y="0"/>
</gates>
<devices>
<device name="" package="SO-8">
<connects>
<connect gate="G$1" pin="D1" pad="5"/>
<connect gate="G$1" pin="D2" pad="6"/>
<connect gate="G$1" pin="D3" pad="7"/>
<connect gate="G$1" pin="D4" pad="8"/>
<connect gate="G$1" pin="G" pad="4"/>
<connect gate="G$1" pin="NC" pad="1"/>
<connect gate="G$1" pin="S1" pad="2"/>
<connect gate="G$1" pin="S2" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="P-CHANNEL-SI9400DY">
<gates>
<gate name="G$1" symbol="P-CHANNEL-SI9400DY" x="-2.54" y="0"/>
</gates>
<devices>
<device name="" package="SO-8">
<connects>
<connect gate="G$1" pin="D1" pad="5"/>
<connect gate="G$1" pin="D2" pad="6"/>
<connect gate="G$1" pin="D3" pad="7"/>
<connect gate="G$1" pin="D4" pad="8"/>
<connect gate="G$1" pin="G" pad="4"/>
<connect gate="G$1" pin="NC" pad="1"/>
<connect gate="G$1" pin="S1" pad="2"/>
<connect gate="G$1" pin="S2" pad="3"/>
</connects>
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
<deviceset name="FDS8817NZ">
<gates>
</gates>
<devices>
<device name="">
<technologies>
<technology name=""/>
</technologies>
</device>
</devices>
</deviceset>
</devicesets>
</library>
</drawing>
</eagle>